| Presentation | 1999/4/23 Semicoductor-Metal Transition and Negative mgnetoresistance Varying Gate Volage in High-Mobility Poly-Si TFT : Microscopic Transport properties at Low Temperatures Shuichi Ishida, Tadashi Serikawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The low-temperature transport properties with varying gate voltage (VG) have been studied in a high-mobility n-channel poly-Si TFT fabricated from laser-annealed amorpous Si film. We find a crossover from semiconductive (hopping) to metallic (diffusive) regime around the sheet resistance of -7k Ω with increasing VG, which is explained as the gradual increse of the Fermi level from the localized states to the weakly-localized ones in the band-tail. In both regimes, negative magnetoresistance due to the 2-dimensional orbital motion is observed and interpreted by the quntum interference of electrons in the random potential of disordered films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | poly-Si TFT / band-tail / variable-range-hopping / weak localization / negative magnetoresistance / quantum interference of electrons |
| Paper # | ED99-15 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/4/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Semicoductor-Metal Transition and Negative mgnetoresistance Varying Gate Volage in High-Mobility Poly-Si TFT : Microscopic Transport properties at Low Temperatures |
| Sub Title (in English) | |
| Keyword(1) | poly-Si TFT |
| Keyword(2) | band-tail |
| Keyword(3) | variable-range-hopping |
| Keyword(4) | weak localization |
| Keyword(5) | negative magnetoresistance |
| Keyword(6) | quantum interference of electrons |
| 1st Author's Name | Shuichi Ishida |
| 1st Author's Affiliation | Faculty of Science & Engineering, Science University of Tokyo in Yamaguchi() |
| 2nd Author's Name | Tadashi Serikawa |
| 2nd Author's Affiliation | Solid-State-Analysis Center, NTT Electronics Corporation |
| Date | 1999/4/23 |
| Paper # | ED99-15 |
| Volume (vol) | vol.99 |
| Number (no) | 22 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |