Presentation 1994/12/16
Al/InP/InGaAs Near Infrared Photomultiplier Tube
Minoru Niigaki, Toru Hirohata, Tomoko Suzuki, Masami Yamada,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Transfered electron photocathodes with high sensitivity at the wavelength to 1.7 μm consisting of meshed Al schottky electrodes a nd InP, InGaAs hetero structures were developed using photolithographic technique.High sensitivity,fast time response and wide spectral range between 0.3 μm and 1.7 μm were observed f or the first time in newly deveropped near infrared photomultiplier tubes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) photocathode / photomultiplier tube / near infrared / photolithography
Paper # ED94-104
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Committee ED
Conference Date 1994/12/16(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Al/InP/InGaAs Near Infrared Photomultiplier Tube
Sub Title (in English)
Keyword(1) photocathode
Keyword(2) photomultiplier tube
Keyword(3) near infrared
Keyword(4) photolithography
1st Author's Name Minoru Niigaki
1st Author's Affiliation Hamamatsu Photonics K.K.()
2nd Author's Name Toru Hirohata
2nd Author's Affiliation Hamamatsu Photonics K.K.
3rd Author's Name Tomoko Suzuki
3rd Author's Affiliation Hamamatsu Photonics K.K.
4th Author's Name Masami Yamada
4th Author's Affiliation Hamamatsu Photonics K.K.
Date 1994/12/16
Paper # ED94-104
Volume (vol) vol.94
Number (no) 405
Page pp.pp.-
#Pages 6
Date of Issue