| Presentation | 1994/11/18 Effects of annealing using plasma CVD SiN film as a cap on AlGaAs/ GaAs heterostructure Shunji Nakata, Masafumi Yamamoto, Takashi Mizutani, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated how the mobility,u,and carrier density,n_s,of AlGaAs, GaAs two-dimensional electron gas(2DEG)are influenced by the fabrication process using plasma-excited chemical vapor deposition(plasma-CVD)SiN film.Annealing with plasma-CVD SiN film as a cap results in a large reduction in u and n_s.Both,however, are restored by reannealing after removing the SiN film.We further investigated the influence of the same process on a more simplified Si-doped GaAs layer structure through capacitance- voltage(C-V)measurements.It was found that the change of the defect density of Si-doped GaAs by annealing using plasma-CVD SiN film has two contradictory processes:one is the reduction in deposition damage by annealing below 380 ℃ and the other is the pr oduction of new defects arising from annealing with SiN above 300 ℃ .These new defects in Si doped GaAs arising from annealing with SiN were also able to be reduced by reannealing after removing SiN film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Plasma-CVD / annealing with SiN / decrease in Ns / restoration of Ns |
| Paper # | ED94-94,CPM94-90 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/11/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of annealing using plasma CVD SiN film as a cap on AlGaAs/ GaAs heterostructure |
| Sub Title (in English) | |
| Keyword(1) | Plasma-CVD |
| Keyword(2) | annealing with SiN |
| Keyword(3) | decrease in Ns |
| Keyword(4) | restoration of Ns |
| 1st Author's Name | Shunji Nakata |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Masafumi Yamamoto |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | Takashi Mizutani |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| Date | 1994/11/18 |
| Paper # | ED94-94,CPM94-90 |
| Volume (vol) | vol.94 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |