Presentation 1994/11/18
Ku-Band 6.6W High Efficiency HJFET Amplifier
Kohji Matsunaga, Yasuhiro Okamoto, Masaaki Kuzuhara,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) At Ku-Band,an internally matched high power AlGaAs, InGaAs HJFET amplifier has been successfully developed.Large signal load-pull measurements were performed on a 1.05mm gate periphery device to obtain optimal power and optimal PAE.The unit 1.05mm HJFET chip has exhibited an output power of 29.1dBm(O.813W),with 13.4dB linear gain and 60% PAE with reasonable linearity.A 8.4mm HJFET chip which consists of 8 unit FETs has been selected as the building block of the power amplifier.The amplifier has demonstrated an output power of 37.5dBm(5.6W),with 13dB linear gain and 56% PAE with a 7V drain bias.When the drain bias was increased to 8V,it delivered 38.2dBm(6.6W)output power with 12.5dB linear gain and 50% PAE with excellent linearity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Heterojvuction / High Efficiency / Power Amplifier / Internally Matched
Paper # ED94-93,CPM94-89
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Committee ED
Conference Date 1994/11/18(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ku-Band 6.6W High Efficiency HJFET Amplifier
Sub Title (in English)
Keyword(1) Heterojvuction
Keyword(2) High Efficiency
Keyword(3) Power Amplifier
Keyword(4) Internally Matched
1st Author's Name Kohji Matsunaga
1st Author's Affiliation Kansai Electronics Research Laboratories,NEC Corporation()
2nd Author's Name Yasuhiro Okamoto
2nd Author's Affiliation Kansai Electronics Research Laboratories,NEC Corporation
3rd Author's Name Masaaki Kuzuhara
3rd Author's Affiliation Kansai Electronics Research Laboratories,NEC Corporation
Date 1994/11/18
Paper # ED94-93,CPM94-89
Volume (vol) vol.94
Number (no) 346
Page pp.pp.-
#Pages 6
Date of Issue