Presentation | 1994/11/18 Flow Rate Modulation Epitaxy of AlGaAs/GaAs Quantum Wires on Non- planar Substrates and its Optical Properties Xue-Lun Wang, Mutsuo Ogura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Flow rate modulation epitaxy(FME)was applied for the first time to the low temperature growt hof quantum wires(QWRs)on non-planar substrates.The growth selectivity was found to be enhanced greatly by the use of FME,as compared with the conventional MOCVD method. An AlGaAs, GaAs QWR with a central thickness of about 9 nm and a lateral width of,about 28 nm is successftilly grown at 600 ℃ on V- grooved substrate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | FME / quantum wire / low temperature growth / selective growth |
Paper # | FD94-89,CPM94-85 |
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Committee | ED |
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Conference Date | 1994/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Flow Rate Modulation Epitaxy of AlGaAs/GaAs Quantum Wires on Non- planar Substrates and its Optical Properties |
Sub Title (in English) | |
Keyword(1) | FME |
Keyword(2) | quantum wire |
Keyword(3) | low temperature growth |
Keyword(4) | selective growth |
1st Author's Name | Xue-Lun Wang |
1st Author's Affiliation | Electrotechnical Laboratory() |
2nd Author's Name | Mutsuo Ogura |
2nd Author's Affiliation | Electrotechnical Laboratory |
Date | 1994/11/18 |
Paper # | FD94-89,CPM94-85 |
Volume (vol) | vol.94 |
Number (no) | 346 |
Page | pp.pp.- |
#Pages | 6 |
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