Presentation 1994/11/18
Flow Rate Modulation Epitaxy of AlGaAs/GaAs Quantum Wires on Non- planar Substrates and its Optical Properties
Xue-Lun Wang, Mutsuo Ogura,
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Abstract(in English) Flow rate modulation epitaxy(FME)was applied for the first time to the low temperature growt hof quantum wires(QWRs)on non-planar substrates.The growth selectivity was found to be enhanced greatly by the use of FME,as compared with the conventional MOCVD method. An AlGaAs, GaAs QWR with a central thickness of about 9 nm and a lateral width of,about 28 nm is successftilly grown at 600 ℃ on V- grooved substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FME / quantum wire / low temperature growth / selective growth
Paper # FD94-89,CPM94-85
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Conference Date 1994/11/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Flow Rate Modulation Epitaxy of AlGaAs/GaAs Quantum Wires on Non- planar Substrates and its Optical Properties
Sub Title (in English)
Keyword(1) FME
Keyword(2) quantum wire
Keyword(3) low temperature growth
Keyword(4) selective growth
1st Author's Name Xue-Lun Wang
1st Author's Affiliation Electrotechnical Laboratory()
2nd Author's Name Mutsuo Ogura
2nd Author's Affiliation Electrotechnical Laboratory
Date 1994/11/18
Paper # FD94-89,CPM94-85
Volume (vol) vol.94
Number (no) 346
Page pp.pp.-
#Pages 6
Date of Issue