| Presentation | 1994/11/18 AlGaAs/GaAs buried heterosutructure laserby in-situ etch regrowth process OGURA Mitsuo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A surface emitting laser and complex cavity laser AlGaAs/GaAs buried Heterostructure are fabiricated by the in-stu etch and regrowth process in which ECR dry etching and MOCVD regrowth are performed in the adjacent chamber without exposing the substrate into atmosphere. Surface recombination velocity at the regrown interface is estimated from the size effect of laser characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | ED94-85,CPM94-81 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/11/18(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaAs/GaAs buried heterosutructure laserby in-situ etch regrowth process |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | OGURA Mitsuo |
| 1st Author's Affiliation | Electron device division,Electorotechnical Laboratory() |
| Date | 1994/11/18 |
| Paper # | ED94-85,CPM94-81 |
| Volume (vol) | vol.94 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 8 |
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