Presentation 1994/5/20
Nondestructive Depth Profiling Using Soft X-ray Emission Spectroscopy -Study of Ni-silicide/Si hetero contact system-
Shoichi Yamauchi, Motohiro Iwami, Hisayoshi Ohshima, Tadashi Hattori,
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Abstract(in English) We have paid attention to the valence band structure of metal- silicides, Si heterocontact system by using Soft X-ray Emission Spectroscopy:SXES.Nondestructive depth profiling analysis was performed by Incident Energy Variation(IEV)method. Furthermore,we have observed the influence of crystallographic relationship of Si substrate on the growth of Ni-silicide by using SXES.On Si(lll)substrate,NiSi and epitaxial NiSi_2 were formed,and NiSi and Si region were extended on Si(100)substrate,where both samples were treated same condition.
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Keyword(in English) SXES / valence band / nondestructive analysis / Ni-silicide / epitaxial growth
Paper # ED94-28,CPM94-29
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Conference Date 1994/5/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Nondestructive Depth Profiling Using Soft X-ray Emission Spectroscopy -Study of Ni-silicide/Si hetero contact system-
Sub Title (in English)
Keyword(1) SXES
Keyword(2) valence band
Keyword(3) nondestructive analysis
Keyword(4) Ni-silicide
Keyword(5) epitaxial growth
1st Author's Name Shoichi Yamauchi
1st Author's Affiliation Research Laboratories,Nippondenso Co.,Ltd.,()
2nd Author's Name Motohiro Iwami
2nd Author's Affiliation Research Laboratory for Surface Science,Faculty of Science,Okayama University
3rd Author's Name Hisayoshi Ohshima
3rd Author's Affiliation Research Laboratories,Nippondenso Co.,Ltd.,
4th Author's Name Tadashi Hattori
4th Author's Affiliation Research Laboratories,Nippondenso Co.,Ltd.,
Date 1994/5/20
Paper # ED94-28,CPM94-29
Volume (vol) vol.94
Number (no) 47
Page pp.pp.-
#Pages 8
Date of Issue