| Presentation | 1994/5/20 Reduction of the surface recombination velocity of GaAs by Si^+ implantation -By using the non-contact laser/microwave evaluation method- Hideaki Yoshida, Yasuo Okuyama, Masaya Ichimura, Akira Usami, Takao Wada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The surface recombination of GaAs which has a high carrier concentration layer formed by Si^+ implantation at the surface has been investigated using the non-contact laser, microwave evaluation method.First,the dependence on dosage was studied.The results show that the effective surface recombination velocity decreased with dosage because of the high carrier concentration layer formed after the annealing.Second,the dependence on implantation energy was studied The results show that the effective surface recombination velocity increased with energy.The results agree with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / surface recombination / Si^+ implantation / non-contact laser/icrowave evaluation method / high carrier concentration layer / high-low junction |
| Paper # | ED94-26,CPM94-27 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of the surface recombination velocity of GaAs by Si^+ implantation -By using the non-contact laser/microwave evaluation method- |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | surface recombination |
| Keyword(3) | Si^+ implantation |
| Keyword(4) | non-contact laser/icrowave evaluation method |
| Keyword(5) | high carrier concentration layer |
| Keyword(6) | high-low junction |
| 1st Author's Name | Hideaki Yoshida |
| 1st Author's Affiliation | Department of Electnical and Computer Engineering,Nagoya Institute of Technology() |
| 2nd Author's Name | Yasuo Okuyama |
| 2nd Author's Affiliation | Department of Electnical and Computer Engineering,Nagoya Institute of Technology |
| 3rd Author's Name | Masaya Ichimura |
| 3rd Author's Affiliation | Department of Electnical and Computer Engineering,Nagoya Institute of Technology |
| 4th Author's Name | Akira Usami |
| 4th Author's Affiliation | Department of Electnical and Computer Engineering,Nagoya Institute of Technology |
| 5th Author's Name | Takao Wada |
| 5th Author's Affiliation | Department of Applied Electronics,Daido Institute of Technology |
| Date | 1994/5/20 |
| Paper # | ED94-26,CPM94-27 |
| Volume (vol) | vol.94 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |