Presentation 1994/5/20
Consecutive growth of Ge/GaAs from Ga-As-Ge solution
Toshiyuki Kamiya, Masakazu Kimura, Akira Tanaka, Tokuzo Sukegawa,
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Abstract(in English) The growth layers precipitated on GaAs(100)substrates from Ga-As- Ge solution has been investigated.Two layers were observed in the grown layer,obviously.The first layers with about 20μm thickness c onsisted of GaAs,and the very thick second layers were composed of Ge.The results of X-ray diffraction measurement indicated that these were epitaxial layers.The GaAs epi.layers and the Ge epi. layers were p-type and low resistivity.Both layers had uniform resistivitys along growth direction,respectivery.These results indicated that a p^+ GaAs epi.layer and a p^+ Ge epi.layer could be grown consecutively from Ga-As-Ge solution.This growth method, which can be utilize inverse epitaxy is promissing for fabrication technique of GaAs power devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs / Ge / eutectic / hetero-structure / Ga-As-Ge solution / epitaxial
Paper # ED94-24,CPM94-25
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Committee ED
Conference Date 1994/5/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Consecutive growth of Ge/GaAs from Ga-As-Ge solution
Sub Title (in English)
Keyword(1) GaAs
Keyword(2) Ge
Keyword(3) eutectic
Keyword(4) hetero-structure
Keyword(5) Ga-As-Ge solution
Keyword(6) epitaxial
1st Author's Name Toshiyuki Kamiya
1st Author's Affiliation Research Institute of Electronics,Shizuoka University()
2nd Author's Name Masakazu Kimura
2nd Author's Affiliation Research Institute of Electronics,Shizuoka University
3rd Author's Name Akira Tanaka
3rd Author's Affiliation Research Institute of Electronics,Shizuoka University
4th Author's Name Tokuzo Sukegawa
4th Author's Affiliation Research Institute of Electronics,Shizuoka University
Date 1994/5/20
Paper # ED94-24,CPM94-25
Volume (vol) vol.94
Number (no) 47
Page pp.pp.-
#Pages 6
Date of Issue