| Presentation | 1994/5/20 Growth mode transition in GaAs/GaP(001) Takashi Nomura, Masahiro Yoshikawa, Kenji Ishikawa, Minoru Hagino, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a mechanism of the growth mode transition from layer-by-layer growth to three dimensional island formation due to the large lattice mismatch.The island formation and strain relaxation of GaAs heteroepitaxial growth onto GaP(001)by molecular beam epitaxy is studied by means of an analysis of the reflection high-energy electron diffraction(RHEED)pattem. Oscillation of lattice parameter of the growing film during layer- by-layer growth is explained by a model which considers an elastic strain relaxation within coherent islands.Oscillation of diffraction intensity of specular spot indicates crifical thickness of the growth mode transition in-creases as the growth rate increases.Change of the RHEED intensity profile reveals transformafion of the film structure from layer to island and relaxation of the misfit strain even after the growth has stopped. The result shows kinetically limited metastable structure of the GaAs film.The increase of the critical thickness is explained by a surpassing of the formation rate of layer over that of island. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Growth mode transition / lattice mismatch / misfit strain / heteroepitaxy / GaAs/aP / molecular beam epitaxy |
| Paper # | ED94-23,CPM94-24 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth mode transition in GaAs/GaP(001) |
| Sub Title (in English) | |
| Keyword(1) | Growth mode transition |
| Keyword(2) | lattice mismatch |
| Keyword(3) | misfit strain |
| Keyword(4) | heteroepitaxy |
| Keyword(5) | GaAs/aP |
| Keyword(6) | molecular beam epitaxy |
| 1st Author's Name | Takashi Nomura |
| 1st Author's Affiliation | Research Institute of Electronics,Shizuoka University() |
| 2nd Author's Name | Masahiro Yoshikawa |
| 2nd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| 3rd Author's Name | Kenji Ishikawa |
| 3rd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| 4th Author's Name | Minoru Hagino |
| 4th Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| Date | 1994/5/20 |
| Paper # | ED94-23,CPM94-24 |
| Volume (vol) | vol.94 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |