| Presentation | 1994/5/20 Improvement of crystalline quallity in regrown GaAs on AlGaAs using a novel two-step HCl gas etching process Hirotaka Kizuki, Nariaki Fujii, Motoharu Miyashita, Yutaka Mihashi, Sabro Takamiya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A combined process,namely the two-step HCl gas etching and the following MOCVD regrowth,is newly developed.The two-step HCl gas etching consists of low-temperature HCl gastreatment(LTT)and succeeding high-temperature HCl gas etching.Using the two-step HCl gas etching process,no carbon accumulation was detected at the interface between the regrown GaAs layer and the etched Al_0.48> Ga_0.52>As surface.Oxygen accumulation at the regrowth interface was reduced to less than one fifth by applying the LTT.The dislocation density of the regrown GaAs layer was shown to be comparable to that found in the usual GaAs homoepitaxial layer.The results of carrier lifetime measurements in GaAs, AlGaAs regrown DH structures indicated the excellent quality of both the regrown GaAs layer and heterointerfaces. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | low temperature HCl gas treament / in situ process / gas etching / regrowth on AlGaAs / MOCVD |
| Paper # | ED94-22,CPM94-23 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of crystalline quallity in regrown GaAs on AlGaAs using a novel two-step HCl gas etching process |
| Sub Title (in English) | |
| Keyword(1) | low temperature HCl gas treament |
| Keyword(2) | in situ process |
| Keyword(3) | gas etching |
| Keyword(4) | regrowth on AlGaAs |
| Keyword(5) | MOCVD |
| 1st Author's Name | Hirotaka Kizuki |
| 1st Author's Affiliation | Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation() |
| 2nd Author's Name | Nariaki Fujii |
| 2nd Author's Affiliation | Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation |
| 3rd Author's Name | Motoharu Miyashita |
| 3rd Author's Affiliation | Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation |
| 4th Author's Name | Yutaka Mihashi |
| 4th Author's Affiliation | Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation |
| 5th Author's Name | Sabro Takamiya |
| 5th Author's Affiliation | Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation |
| Date | 1994/5/20 |
| Paper # | ED94-22,CPM94-23 |
| Volume (vol) | vol.94 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |