| Presentation | 1994/5/20 Fabrication of AlGaAs/GaAs Double-Hetero structure LD on GaAs(lll) A Substrate Yutaka Niwano, Takashi Egawa, Kazuhisa Fujita, Kohichi Nitatori, Toshihide Watanabe, Takashi Jimbo, Masayoshi Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Amphoteric nature of Si has been reported in growth of GaAs and AlGaAs by MBE.This amphoteric characteristic of Si has been mainly used as a current confinement in fabrication of lateral GaAs p-n junction on a patterned substrate.Although the growth of AlGaAs on planar GaAs(lll)A substrate is important for device applications such as LED and laser diode,there are problems in surface morphology,heterointerface,conduction type and carrier concentration.In this study,we demonstrate 300 K DC operation of AlGaAs, GaAs double-heterostructure(DH)LED on GaAs(lll)A-5゜- misoriented substrae using only Si dopant for the first time. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MBE / GaAs(lll)A substrate / only Sidopant / AlGaAs/aAs DH Structure / LED |
| Paper # | ED94-21,CPM94-22 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of AlGaAs/GaAs Double-Hetero structure LD on GaAs(lll) A Substrate |
| Sub Title (in English) | |
| Keyword(1) | MBE |
| Keyword(2) | GaAs(lll)A substrate |
| Keyword(3) | only Sidopant |
| Keyword(4) | AlGaAs/aAs DH Structure |
| Keyword(5) | LED |
| 1st Author's Name | Yutaka Niwano |
| 1st Author's Affiliation | Department of Electrical and Computer,Nagoya Institute of Technology() |
| 2nd Author's Name | Takashi Egawa |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices,Nagoya Institute of Technology |
| 3rd Author's Name | Kazuhisa Fujita |
| 3rd Author's Affiliation | ATR Optical and Radio Communications Research Laboratories |
| 4th Author's Name | Kohichi Nitatori |
| 4th Author's Affiliation | ATR Optical and Radio Communications Research Laboratories |
| 5th Author's Name | Toshihide Watanabe |
| 5th Author's Affiliation | ATR Optical and Radio Communications Research Laboratories |
| 6th Author's Name | Takashi Jimbo |
| 6th Author's Affiliation | Research Center for Micro-Structure Devices,Nagoya Institute of Technology |
| 7th Author's Name | Masayoshi Umeno |
| 7th Author's Affiliation | Department of Electrical and Computer,Nagoya Institute of Technology |
| Date | 1994/5/20 |
| Paper # | ED94-21,CPM94-22 |
| Volume (vol) | vol.94 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 6 |
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