Presentation 1994/5/20
Excimer Laser Doping of Erbium Adsorbed in Porus Silicon Structure
Kenshiro Nakashima, Osamu Eryuu, Naoki Ikeuchi, Hironori Oowaki,
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Abstract(in English) Erbium-doping by the excimer laser irradiation has been investigated in porus silicon adsorbed with ErCl_3.Rutherford backscattering measurements show that Er atoms are adsorbed uniformly on the porus silicon structure,and that the doped layers with a peak Er concentration of 7.2X10^20>cm^-3> are formed in the 500 nm surface region.RBS and photoluminescence(PL) measurements suggest that porus silicon structures still remain after the single shot of laser irradiation.Proper heat treatments activate Er optical centers to emit sharp luminescence lines characteristic of Er atoms.It is suggested that porus silicon structures provide promising materials suitable for the strong emission of Er-ines at room temperature.
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Keyword(in English) Porus silicon / Erbium / laser doping / photo luminescence / Rutherford backscattering
Paper # ED94-19,CPM94-20
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Committee ED
Conference Date 1994/5/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Excimer Laser Doping of Erbium Adsorbed in Porus Silicon Structure
Sub Title (in English)
Keyword(1) Porus silicon
Keyword(2) Erbium
Keyword(3) laser doping
Keyword(4) photo luminescence
Keyword(5) Rutherford backscattering
1st Author's Name Kenshiro Nakashima
1st Author's Affiliation Nagoya Institute of Technology()
2nd Author's Name Osamu Eryuu
2nd Author's Affiliation Nagoya Institute of Technology
3rd Author's Name Naoki Ikeuchi
3rd Author's Affiliation Nagoya Institute of Technology
4th Author's Name Hironori Oowaki
4th Author's Affiliation Nagoya Institute of Technology
Date 1994/5/20
Paper # ED94-19,CPM94-20
Volume (vol) vol.94
Number (no) 47
Page pp.pp.-
#Pages 8
Date of Issue