Presentation 1994/5/20
Thermal annealing effects of Er lumnescence centers in Er doped Si
Hironori Ohwaki, Osamu Iioka, Hideo Minami, Osamu Eryu, Kensiro Nakashima,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The electronic excitation processes of rare-earth elements Er doped into Si by pulsed laser irradiation have been investigated by means of the photoluminescence spectroscopy method.The results of the photoluminescence measurements prove that new luminescence centers are produced by annealing after laser irradiafion,and that PL spectra are different between before and after annealing.An analysis of PL spectra after annealing shows that Er luminescence centers are in tetrahedral hexagonal and the other sites of Si lattice.In back side excitation photoluminescence measurements,the same spectra,as in the case of optical direct excitation,emerge even by the indirect excitation for Er luminescence centers.These results suggest do excitation rate of Er luminescence centers in Si is independent of their sites.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) rare-earth / Erbium / laser doping / photoluminescence
Paper # ED94-17,CPM94-18
Date of Issue

Conference Information
Committee ED
Conference Date 1994/5/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal annealing effects of Er lumnescence centers in Er doped Si
Sub Title (in English)
Keyword(1) rare-earth
Keyword(2) Erbium
Keyword(3) laser doping
Keyword(4) photoluminescence
1st Author's Name Hironori Ohwaki
1st Author's Affiliation Department of Electrical and Computer Engineering,Nagoya institute of Technology()
2nd Author's Name Osamu Iioka
2nd Author's Affiliation Department of Electrical and Computer Engineering,Nagoya institute of Technology
3rd Author's Name Hideo Minami
3rd Author's Affiliation Department of Electrical and Computer Engineering,Nagoya institute of Technology
4th Author's Name Osamu Eryu
4th Author's Affiliation Department of Electrical and Computer Engineering,Nagoya institute of Technology
5th Author's Name Kensiro Nakashima
5th Author's Affiliation Department of Electrical and Computer Engineering,Nagoya institute of Technology
Date 1994/5/20
Paper # ED94-17,CPM94-18
Volume (vol) vol.94
Number (no) 47
Page pp.pp.-
#Pages 7
Date of Issue