Presentation 1994/5/20
Growth characteristics of HgCdTe layers grown by MOVPE at low temperature
Hiroki Hatano, Kazuhiro Kawamoto, Masaya Minamide, Takayuki Maejima, Touati Ferid, Kazuhito Yasuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Composition control of HgCdTe layers and lattice strain of HgTe and CdTe layers grown by MOVPE at low growth temperature of 275℃ h ave been studied.Cd composition of HgCdTe layer were controled by DMCd flow at fixed Hg and DtBTe flow.Rate of Cd incorporation into grown layers were dependent on DtBTe, Hg ratio.Lattice constants of CdTe and HgTe layers grown at 425℃ decrease steeply with increa sing layer thickness and coincide with bulk values above 5μm.Latti ce constants of layers grown at 275℃ approach bulk values around t hickness of 1μm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOVPE / HgCdTe / CdTe / HgTe / composition control / lattice strain
Paper # ED94-16,CPM94-17
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Committee ED
Conference Date 1994/5/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth characteristics of HgCdTe layers grown by MOVPE at low temperature
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) HgCdTe
Keyword(3) CdTe
Keyword(4) HgTe
Keyword(5) composition control
Keyword(6) lattice strain
1st Author's Name Hiroki Hatano
1st Author's Affiliation Nagoya Institute of Technology()
2nd Author's Name Kazuhiro Kawamoto
2nd Author's Affiliation Nagoya Institute of Technology
3rd Author's Name Masaya Minamide
3rd Author's Affiliation Nagoya Institute of Technology
4th Author's Name Takayuki Maejima
4th Author's Affiliation Nagoya Institute of Technology
5th Author's Name Touati Ferid
5th Author's Affiliation Nagoya Institute of Technology
6th Author's Name Kazuhito Yasuda
6th Author's Affiliation Nagoya Institute of Technology
Date 1994/5/20
Paper # ED94-16,CPM94-17
Volume (vol) vol.94
Number (no) 47
Page pp.pp.-
#Pages 5
Date of Issue