Presentation | 1994/5/19 Characterization of Diffusion Length and Deep Levels in ZnSe Epitaxitial Films Grown by MOCVD Tsutomu Tanoi, Toshiyuki Ido, Hironobu Kariyazono, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | By using MOCVD n and p ZnSe were epitaxially grown on(100)GaAs single crystal.The diffusion length of minority carriers in epitaxial layers were estimated by Schottky barrier photovoltage method.The value of undooped n-type layers was 0.7-1.3 μm.The temp erature dependence of the diffudion length in p-type layers were also examined.By DLTS method three deep levels were found in p- layer.The energy levels are 0.40,0.50,and 0.63eV.The concentrations are about 10% of acceptor one for three levels. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOCVD / diffusion length / SBPV / DLTS / Deep Level |
Paper # | ED94-14,CPM94-15 |
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Committee | ED |
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Conference Date | 1994/5/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of Diffusion Length and Deep Levels in ZnSe Epitaxitial Films Grown by MOCVD |
Sub Title (in English) | |
Keyword(1) | MOCVD |
Keyword(2) | diffusion length |
Keyword(3) | SBPV |
Keyword(4) | DLTS |
Keyword(5) | Deep Level |
1st Author's Name | Tsutomu Tanoi |
1st Author's Affiliation | Department of Electrical Engineering,Faculty of Engineering,Chubu University() |
2nd Author's Name | Toshiyuki Ido |
2nd Author's Affiliation | Department of Electrical Engineering,Faculty of Engineering,Chubu University / |
3rd Author's Name | Hironobu Kariyazono |
3rd Author's Affiliation | |
Date | 1994/5/19 |
Paper # | ED94-14,CPM94-15 |
Volume (vol) | vol.94 |
Number (no) | 46 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |