Presentation 1994/5/19
Characterization of Diffusion Length and Deep Levels in ZnSe Epitaxitial Films Grown by MOCVD
Tsutomu Tanoi, Toshiyuki Ido, Hironobu Kariyazono,
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Abstract(in English) By using MOCVD n and p ZnSe were epitaxially grown on(100)GaAs single crystal.The diffusion length of minority carriers in epitaxial layers were estimated by Schottky barrier photovoltage method.The value of undooped n-type layers was 0.7-1.3 μm.The temp erature dependence of the diffudion length in p-type layers were also examined.By DLTS method three deep levels were found in p- layer.The energy levels are 0.40,0.50,and 0.63eV.The concentrations are about 10% of acceptor one for three levels.
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Keyword(in English) MOCVD / diffusion length / SBPV / DLTS / Deep Level
Paper # ED94-14,CPM94-15
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Conference Date 1994/5/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of Diffusion Length and Deep Levels in ZnSe Epitaxitial Films Grown by MOCVD
Sub Title (in English)
Keyword(1) MOCVD
Keyword(2) diffusion length
Keyword(3) SBPV
Keyword(4) DLTS
Keyword(5) Deep Level
1st Author's Name Tsutomu Tanoi
1st Author's Affiliation Department of Electrical Engineering,Faculty of Engineering,Chubu University()
2nd Author's Name Toshiyuki Ido
2nd Author's Affiliation Department of Electrical Engineering,Faculty of Engineering,Chubu University /
3rd Author's Name Hironobu Kariyazono
3rd Author's Affiliation
Date 1994/5/19
Paper # ED94-14,CPM94-15
Volume (vol) vol.94
Number (no) 46
Page pp.pp.-
#Pages 7
Date of Issue