Presentation 1994/5/19
Growth of GaN using metallic-Ga and NH_3.
Hiromitsu Sakai, Naonori Kondo, Hiroshi Amano, Isamu Akasaki,
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Abstract(in English) Column-III nitride semiconductors are promising for the application to light emitters in the short wavelength region.It is well known that low-temperature deposited buffer layer is effective for the growth of high quality Column-III nitrides on the sapphire substrate.In-site monitoring of the growth process in atomic scale using electron beam diffraction is adequate to clarify the mechanism of buffer layer.In this study,preteatment condition for the molecular beam epitaxy growth of GaN on sapphire was investigated.It is found that the combination of initial nitridation of the surface of the sapphire and low temprature buffer layer is effective for the growth of high quality GaN on sapphire.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN(Gallium Nitride) / MBF(molecular beam epifaxy) / nitridation / buffer layer
Paper # ED94-9,CPM94-10
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Committee ED
Conference Date 1994/5/19(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaN using metallic-Ga and NH_3.
Sub Title (in English)
Keyword(1) GaN(Gallium Nitride)
Keyword(2) MBF(molecular beam epifaxy)
Keyword(3) nitridation
Keyword(4) buffer layer
1st Author's Name Hiromitsu Sakai
1st Author's Affiliation Department of Electrical and Electronic Engneering,Faculty of Science and Technology,Meijo University()
2nd Author's Name Naonori Kondo
2nd Author's Affiliation Department of Electrical and Electronic Engneering,Faculty of Science and Technology,Meijo University
3rd Author's Name Hiroshi Amano
3rd Author's Affiliation Department of Electrical and Electronic Engneering,Faculty of Science and Technology,Meijo University
4th Author's Name Isamu Akasaki
4th Author's Affiliation Department of Electrical and Electronic Engneering,Faculty of Science and Technology,Meijo University
Date 1994/5/19
Paper # ED94-9,CPM94-10
Volume (vol) vol.94
Number (no) 46
Page pp.pp.-
#Pages 6
Date of Issue