| Presentation | 1994/10/11 Control of GaAs Schottky Barrier Height by Si Interface Control Layer and its Application for Quntum Structures Seiya Kasai, Syo-ichi Uno, Tamotsu Hashizume, Hideki Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Control of GaAs Schottky barrier heights by Si Interface Control Layer(Si ICL)was attempted.It was shown that Si ICL makes it possible to control the barrier height over the range of 300meV with suitable ICL thickness and doping into the ICL. To control the Schottky barrier height spatially at quantum structures,FIB technique was investigated.FIB-induced interface state gave the Schottky barrier height change in the range of 290meV.This indicates the possibility of control Schottky barrier heights in nano-meter scale. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si ICL / GaAs / Schottky barrier / Interface state / Quantum potential / FIB |
| Paper # | ED94-78 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of GaAs Schottky Barrier Height by Si Interface Control Layer and its Application for Quntum Structures |
| Sub Title (in English) | |
| Keyword(1) | Si ICL |
| Keyword(2) | GaAs |
| Keyword(3) | Schottky barrier |
| Keyword(4) | Interface state |
| Keyword(5) | Quantum potential |
| Keyword(6) | FIB |
| 1st Author's Name | Seiya Kasai |
| 1st Author's Affiliation | Faculty of Engineering,Hokkaido University() |
| 2nd Author's Name | Syo-ichi Uno |
| 2nd Author's Affiliation | Faculty of Engineering,Hokkaido University |
| 3rd Author's Name | Tamotsu Hashizume |
| 3rd Author's Affiliation | Faculty of Engineering,Hokkaido University |
| 4th Author's Name | Hideki Hasegawa |
| 4th Author's Affiliation | Research Center for Interface Quntum Electronics,Faculty of Engineering,Hokkaido University |
| Date | 1994/10/11 |
| Paper # | ED94-78 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |