Presentation | 1994/10/11 Direct Schottky contacts to the edge of quantum well and its application to wire transistor. Hiroshi Okada, Kei-ichiroh Jinushi, Nan-Jian Wu, Tamotsu Hashizume, Hideki Hasegawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Schottky contact to the edge of quantum well(QW)was selectively formed by the in-situ electrochemical process,and its depletion properties were systematically investigated.Depletion width of the Schottky, QW contact depends linearly on the applied voltage,being consistent with theoretical prediction.Wire transistor structure having the Schottky in-plane gates were fabricated.Field-effect transistor operation with excellent gate control was obtained.It was found that the I-V characteristics of the transistor can be explained based on the depletion behavior of the Schottky/QW system. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | electrochemical process / quantum structure / Schottky contact / wire transistor |
Paper # | ED94-76 |
Date of Issue |
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Committee | ED |
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Conference Date | 1994/10/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Direct Schottky contacts to the edge of quantum well and its application to wire transistor. |
Sub Title (in English) | |
Keyword(1) | electrochemical process |
Keyword(2) | quantum structure |
Keyword(3) | Schottky contact |
Keyword(4) | wire transistor |
1st Author's Name | Hiroshi Okada |
1st Author's Affiliation | Faculty of Engineering,Hokkaido university() |
2nd Author's Name | Kei-ichiroh Jinushi |
2nd Author's Affiliation | Faculty of Engineering,Hokkaido university |
3rd Author's Name | Nan-Jian Wu |
3rd Author's Affiliation | Faculty of Engineering,Hokkaido university |
4th Author's Name | Tamotsu Hashizume |
4th Author's Affiliation | Faculty of Engineering,Hokkaido university |
5th Author's Name | Hideki Hasegawa |
5th Author's Affiliation | Research center for interface quantum electronics,Faculty of Engineering,Hokkaido university |
Date | 1994/10/11 |
Paper # | ED94-76 |
Volume (vol) | vol.94 |
Number (no) | 268 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |