Presentation 1994/10/11
Direct Schottky contacts to the edge of quantum well and its application to wire transistor.
Hiroshi Okada, Kei-ichiroh Jinushi, Nan-Jian Wu, Tamotsu Hashizume, Hideki Hasegawa,
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Abstract(in English) Schottky contact to the edge of quantum well(QW)was selectively formed by the in-situ electrochemical process,and its depletion properties were systematically investigated.Depletion width of the Schottky, QW contact depends linearly on the applied voltage,being consistent with theoretical prediction.Wire transistor structure having the Schottky in-plane gates were fabricated.Field-effect transistor operation with excellent gate control was obtained.It was found that the I-V characteristics of the transistor can be explained based on the depletion behavior of the Schottky/QW system.
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Keyword(in English) electrochemical process / quantum structure / Schottky contact / wire transistor
Paper # ED94-76
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Committee ED
Conference Date 1994/10/11(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Direct Schottky contacts to the edge of quantum well and its application to wire transistor.
Sub Title (in English)
Keyword(1) electrochemical process
Keyword(2) quantum structure
Keyword(3) Schottky contact
Keyword(4) wire transistor
1st Author's Name Hiroshi Okada
1st Author's Affiliation Faculty of Engineering,Hokkaido university()
2nd Author's Name Kei-ichiroh Jinushi
2nd Author's Affiliation Faculty of Engineering,Hokkaido university
3rd Author's Name Nan-Jian Wu
3rd Author's Affiliation Faculty of Engineering,Hokkaido university
4th Author's Name Tamotsu Hashizume
4th Author's Affiliation Faculty of Engineering,Hokkaido university
5th Author's Name Hideki Hasegawa
5th Author's Affiliation Research center for interface quantum electronics,Faculty of Engineering,Hokkaido university
Date 1994/10/11
Paper # ED94-76
Volume (vol) vol.94
Number (no) 268
Page pp.pp.-
#Pages 6
Date of Issue