| Presentation | 1994/10/11 Highly strained InGaAs channel HEMTs on GaAs substrates grown by MBE Makoto Kudou, Tomoyoshi Mishima, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Highly strained InGaAs layers grown by MBE are investigated using photoluminescence and hall measurements for improving the performance of pseudomorphic HEMTS.At a low growth temperature of 400℃ at which In surface segregation is reduced,the In mole fracti on exceeds 0.30 without degmrading crystalline quality of InGaAs layers.A relatively thin 6-nm channel is thick enough to obtain high mobility and high sheet electron concentration by increasing the In composition.The highly strained In_xGa^1-x>As channel HEMTs(0.3【less than or equal】x【less than or equal】0.4)show supe rior transconductance over conventional In_0.25>Ga_0.75>As channel HEMTS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | strained InGaAs layers / MBE / HEMTs / surface segregation / In composition |
| Paper # | ED94-75 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly strained InGaAs channel HEMTs on GaAs substrates grown by MBE |
| Sub Title (in English) | |
| Keyword(1) | strained InGaAs layers |
| Keyword(2) | MBE |
| Keyword(3) | HEMTs |
| Keyword(4) | surface segregation |
| Keyword(5) | In composition |
| 1st Author's Name | Makoto Kudou |
| 1st Author's Affiliation | Central Research Laboratory,Hitachi,Ltd.() |
| 2nd Author's Name | Tomoyoshi Mishima |
| 2nd Author's Affiliation | Central Research Laboratory,Hitachi,Ltd. |
| Date | 1994/10/11 |
| Paper # | ED94-75 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |