| Presentation | 1994/10/11 Highly reliable and high performance InAlAs/InGaAs HJFET Akira Fujihara, Kazuhiko Onda, Emiko Mizuki, Hironobu Miyamoto, Yasuko Hori, Masaaki Kuzuhara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An InAlAs, InGaAs CCMT(Channel Composition Modilated Transistors) with an In_0.53> Ga_0.47> As/In_0.8> Ga_0.2>As/In_0.53>Ga_0. 47>As channel layer was successfully fabricated.An extrinsic cutoff frequency fT of 235GHz was obtained for a 0.15μm-gate devic e.Delay time analysis,taking account of parasitic elements,showed that the electron drift velocity of the CCMT was 3.5x10^7 cm/s while that of the conventional HJFET was 2.7x10^7cm/s.The superior characteristics of CCMT was mainly attributed to its higher electron drift velocity.In order to improve reliability of InAlAs/ InGaAs devices,we investigated a new Mo/Ti/Pt/Au system for both Ohmic and gate electrodes.The developed Mo-based electrode technology resulted in improved reliability due to the successful suppression of interdiffusion between electrode andsemiconductor. This technology is promising for high performance InAlAs/InGaAs HJFET with high reliability. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FET / InAlAs / InGaAs / Mo / electron velocity / reliability |
| Paper # | ED94-74 |
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| Committee | ED |
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| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly reliable and high performance InAlAs/InGaAs HJFET |
| Sub Title (in English) | |
| Keyword(1) | FET |
| Keyword(2) | InAlAs |
| Keyword(3) | InGaAs |
| Keyword(4) | Mo |
| Keyword(5) | electron velocity |
| Keyword(6) | reliability |
| 1st Author's Name | Akira Fujihara |
| 1st Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation() |
| 2nd Author's Name | Kazuhiko Onda |
| 2nd Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 3rd Author's Name | Emiko Mizuki |
| 3rd Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 4th Author's Name | Hironobu Miyamoto |
| 4th Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 5th Author's Name | Yasuko Hori |
| 5th Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| Date | 1994/10/11 |
| Paper # | ED94-74 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 8 |
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