| Presentation | 1994/10/11 Fine Patterning for Sub-quarter Micron Gate GaAs MESFET Tamotsu Kimura, Tomoyuki Ohshima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The fabrication process based on the phase-shifting mask technology using i-line stepper and the anisotropic etching technology using ECR plasma has realized fine-patterning for the sub-quarter micron WAI refractory gate of ion-implanted GaAs MESFETs. The device with the gate length of 0.17 μm fabricated by the pro cess developed,has shown high-speed characteristics of 7.6 ps, gate with good uniformity,which proves the good process control. To understand the characteristics of the fine gate devices precisely,we evaluated the Schottky barrier height with respect to the gate length and the orientation in the range of sub-quarter micron,and found it can be explained by the effect of piezoelectric charges induced under the gate metal. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs MESFET / sub-quarter micron gate / phase-shifting mask technology / ECR Plasma etching |
| Paper # | ED94-70 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fine Patterning for Sub-quarter Micron Gate GaAs MESFET |
| Sub Title (in English) | |
| Keyword(1) | GaAs MESFET |
| Keyword(2) | sub-quarter micron gate |
| Keyword(3) | phase-shifting mask technology |
| Keyword(4) | ECR Plasma etching |
| 1st Author's Name | Tamotsu Kimura |
| 1st Author's Affiliation | Semiconductor Technology Laboratory,Oki Electric() |
| 2nd Author's Name | Tomoyuki Ohshima |
| 2nd Author's Affiliation | Semiconductor Technology Laboratory,Oki Electric |
| Date | 1994/10/11 |
| Paper # | ED94-70 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |