Presentation 1994/10/11
Effect of AlAs surface reconstruction on properties of Ge on AlAs
Takeshi Maeda, Hitoshi Tanaka, Masahiko Takikawa, Kazumi Kasai,
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Abstract(in English) Ge, GaAs hetero-epitaxial systems have the advantage of combining high hole and high electron mobility devices.However, autodoping is still a problem.In an effort to solve this issue we investigated the dependence of the properties of Ge layer on AlAs surface reconstruction in molecular beam epitaxial growth of Ge on AlAs(100).Hole mobility depended drastically on surface reconstruction,and it was greatly improved on (5×4)-reconstructed AlAs.Hole mobility as high as 564cm^2/V・s with a sheet hole concentration of 1.1×10^13>cm^-2> was obtained for 380 nm thick Ge.Moreover,the mobility of the surface region reached 1088cm^2/V・ s.The (5×4)-reconstructed AlAs surface is considered to have a rou ghly even coverage of Al and As.We believe that charge neutrality at the interface suppresses surface segregation and/or diffusion.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Germanium (Ge) / Gallium Arsenide (GaAs) / molecular beam epitaxy (MBE) / surface reconstruction / segregation / diffusion
Paper # ED94-69
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Committee ED
Conference Date 1994/10/11(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of AlAs surface reconstruction on properties of Ge on AlAs
Sub Title (in English)
Keyword(1) Germanium (Ge)
Keyword(2) Gallium Arsenide (GaAs)
Keyword(3) molecular beam epitaxy (MBE)
Keyword(4) surface reconstruction
Keyword(5) segregation
Keyword(6) diffusion
1st Author's Name Takeshi Maeda
1st Author's Affiliation Fujitsu Laboratories()
2nd Author's Name Hitoshi Tanaka
2nd Author's Affiliation Fujitsu Laboratories
3rd Author's Name Masahiko Takikawa
3rd Author's Affiliation Fujitsu Laboratories
4th Author's Name Kazumi Kasai
4th Author's Affiliation Fujitsu Laboratories
Date 1994/10/11
Paper # ED94-69
Volume (vol) vol.94
Number (no) 268
Page pp.pp.-
#Pages 6
Date of Issue