| Presentation | 1994/10/11 Surface Passivation of Compound Semiconductor Quantum Well Structure Using Silicon Interface Control Layer Satoshi Kodama, Satoshi Koyanagi, Tamotsu Hashizume, Hideki Hasegawa, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A novel passivation scheme using ultrathin MBE silicon interface control layer (ICL) and ultra thin silicon nitride layer is investigated for use in passivation of the compound semiconductor quantum structures.Process optimization was made by in-situ X-ray photoelectron spectroscopy and electrical characterization of Insulatorsemiconductor interface formed on In_0.53>Ga_0.47>As.A drastic reduction of interface state density into 10^10>cm^-2>・ eV^-1> range was obtained under optimum condition.The passivation scheme was then applied to passivation of Al_0.3>Ga_0.7>As, GaAs near-surface quantum wells.Remarkable recovery of photoluminescence (PL) intensity was observed by application of the present passivation scheme on the barrier surface,being consistent with the reduction of surface states. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | near-surface quantum well / passivation / interface control layer / surface state / DIGS model |
| Paper # | ED94-67 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface Passivation of Compound Semiconductor Quantum Well Structure Using Silicon Interface Control Layer |
| Sub Title (in English) | |
| Keyword(1) | near-surface quantum well |
| Keyword(2) | passivation |
| Keyword(3) | interface control layer |
| Keyword(4) | surface state |
| Keyword(5) | DIGS model |
| 1st Author's Name | Satoshi Kodama |
| 1st Author's Affiliation | Faculty of Engineering,Hokkaido University() |
| 2nd Author's Name | Satoshi Koyanagi |
| 2nd Author's Affiliation | Faculty of Engineering,Hokkaido University |
| 3rd Author's Name | Tamotsu Hashizume |
| 3rd Author's Affiliation | Faculty of Engineering,Hokkaido University |
| 4th Author's Name | Hideki Hasegawa |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics,Faculty of Engineering,Hokkaido University |
| Date | 1994/10/11 |
| Paper # | ED94-67 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |