| Presentation | 1994/10/11 Modulation of FET Operation by Carrier Trapping at the WSi/GaAs Shottky Contacts Ryo Hattori, Takako Kitamura, Kazuhiko Sato, Osamu Ishihara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have found a way to improve the thermal stability of GaAs, InGaP Schottky contacts by using WSiN with low N content for the Schottky metal.When N content is 10% or less,TEM observation reveals that minroscopic interaction is completly supressed.As a result,a WSiN/GaAs CAP/InGaP Schottky contact shows thermal stabiliy after annealing of 800C for 100 min.even though the GaAs cap is as thin as 25A.We also found that a double layered structure,WSiN(N=37%)/WSiN(N=10%),shows good annealing performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / WSiN / N content / double layered structure / Schottky contact |
| Paper # | ED94-67 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/10/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modulation of FET Operation by Carrier Trapping at the WSi/GaAs Shottky Contacts |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | WSiN |
| Keyword(3) | N content |
| Keyword(4) | double layered structure |
| Keyword(5) | Schottky contact |
| 1st Author's Name | Ryo Hattori |
| 1st Author's Affiliation | Mitsubishi Electric Corporation() |
| 2nd Author's Name | Takako Kitamura |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation |
| 3rd Author's Name | Kazuhiko Sato |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation |
| 4th Author's Name | Osamu Ishihara |
| 4th Author's Affiliation | Mitsubishi Electric Corporation |
| Date | 1994/10/11 |
| Paper # | ED94-67 |
| Volume (vol) | vol.94 |
| Number (no) | 268 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |