| Presentation | 1994/9/14 TCAD-based Generation of Circuit Model-Parameters for 0.4μm CMOS P rocess Technology Hisaaki Kunitomo, Kimiko Aoyama, Katsumi Tsuneno, Hisako Sato, Takahide Nakamura, Hiroo Masuda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To achieve concurrent design of process and circuit for next - generation 0.4um CMOS, DRAM,predictive process design and MOS model - parameter generation have been conducted based - on process and device simulations.A couple of tens simulations and gloval calibrations based on process and device data - base successfully provide reliable and accurate prediction in device performance.A set of channel - length dependent MOS model parameters were determined with reasonable accuracy for 0.4um CNOS circuit design without TEG fabrication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | circuit model-parameter / worst condition / channel-length dependent |
| Paper # | ED94-65,SDM94-102,VLD94-62 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/9/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | TCAD-based Generation of Circuit Model-Parameters for 0.4μm CMOS P rocess Technology |
| Sub Title (in English) | |
| Keyword(1) | circuit model-parameter |
| Keyword(2) | worst condition |
| Keyword(3) | channel-length dependent |
| 1st Author's Name | Hisaaki Kunitomo |
| 1st Author's Affiliation | Microcomputer System,Hitachi() |
| 2nd Author's Name | Kimiko Aoyama |
| 2nd Author's Affiliation | Device Development Center,Hitachi |
| 3rd Author's Name | Katsumi Tsuneno |
| 3rd Author's Affiliation | Device Development Center,Hitachi |
| 4th Author's Name | Hisako Sato |
| 4th Author's Affiliation | Device Development Center,Hitachi |
| 5th Author's Name | Takahide Nakamura |
| 5th Author's Affiliation | Device Development Center,Hitachi |
| 6th Author's Name | Hiroo Masuda |
| 6th Author's Affiliation | Device Development Center,Hitachi |
| Date | 1994/9/14 |
| Paper # | ED94-65,SDM94-102,VLD94-62 |
| Volume (vol) | vol.94 |
| Number (no) | 231 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |