| Presentation | 1994/9/14 Substrate Current Model for n-MOSFET′s Including Nonlocal Impact I onization Effect Ken-ichiro Sonoda, Mitsuru Yamaji, Kenji Taniguchi, Chihiro Hamaguchi, Tatsuya Kunikiyo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a nonlocal impact ionization coefficient applicable for the drain region where an electric field changes exponentially. The nonlocal impact ionization coefficient is expressed as a function of an electric field and a characteristic length determined from a thickness of gate oxide and a source, drain junction depth.A new substrate current model for n-MOSFET is also derived on the basis of the new nonlocal impact ionization coefficient.The model well explains the reason why there exists the discrepancy between theoretical and empirical expressions for a characteristic length used in a pseudo two-dimensional model for MOSFET′s.The nonlocal impact ionization model implemented in a dev ice simulator demonstrates that the new impact ionization model can predict substrate current correctly in the framework of drift- diffusion model.. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nonlocal Impact Ionization / Substrate Current / Device Simulation / Drift-Diffusion Model |
| Paper # | ED94-62,SDM94-99,VLD94-59 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/9/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Substrate Current Model for n-MOSFET′s Including Nonlocal Impact I onization Effect |
| Sub Title (in English) | |
| Keyword(1) | Nonlocal Impact Ionization |
| Keyword(2) | Substrate Current |
| Keyword(3) | Device Simulation |
| Keyword(4) | Drift-Diffusion Model |
| 1st Author's Name | Ken-ichiro Sonoda |
| 1st Author's Affiliation | Department of Electronic Engineering,Faculty of Engineering,Osaka University() |
| 2nd Author's Name | Mitsuru Yamaji |
| 2nd Author's Affiliation | Department of Electronic Engineering,Faculty of Engineering,Osaka University |
| 3rd Author's Name | Kenji Taniguchi |
| 3rd Author's Affiliation | Department of Electronic Engineering,Faculty of Engineering,Osaka University |
| 4th Author's Name | Chihiro Hamaguchi |
| 4th Author's Affiliation | Department of Electronic Engineering,Faculty of Engineering,Osaka University |
| 5th Author's Name | Tatsuya Kunikiyo |
| 5th Author's Affiliation | ULSI Laboratory,Mitsubishi Electric Corporation |
| Date | 1994/9/14 |
| Paper # | ED94-62,SDM94-99,VLD94-59 |
| Volume (vol) | vol.94 |
| Number (no) | 231 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |