Presentation 1994/9/14
Novel impact ionization model consistent with band structure of semiconductors
Nobuyuki Sano, Akira Yoshii,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel model of the impact ionization probability in semiconductors was proposed.The present ionization probability is expressed in terms of the density of states of semiconductors and, thus,reflects the details of the realistic band structure of semiconductors.We calculated the ionization probabilities for Si, GaAs,InAs,and In_0.53>Ga_0.47>As,and compared with those from the first-principles under the constant matrix element approximation.A reasonable agreement between the two approaches was obtained.We also found that the ionization probability has a similar magnitude and energy-dependence at high energy regions for all materials we have considered.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) impact ionization / ionization probability / carrier transport / hot-carrier effects
Paper # ED94-61,SDM94-98,VLD94-58
Date of Issue

Conference Information
Committee ED
Conference Date 1994/9/14(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Novel impact ionization model consistent with band structure of semiconductors
Sub Title (in English)
Keyword(1) impact ionization
Keyword(2) ionization probability
Keyword(3) carrier transport
Keyword(4) hot-carrier effects
1st Author's Name Nobuyuki Sano
1st Author's Affiliation NTT LSI Laboratories()
2nd Author's Name Akira Yoshii
2nd Author's Affiliation NTT LSI Laboratories
Date 1994/9/14
Paper # ED94-61,SDM94-98,VLD94-58
Volume (vol) vol.94
Number (no) 231
Page pp.pp.-
#Pages 8
Date of Issue