Presentation | 1994/9/14 Novel impact ionization model consistent with band structure of semiconductors Nobuyuki Sano, Akira Yoshii, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel model of the impact ionization probability in semiconductors was proposed.The present ionization probability is expressed in terms of the density of states of semiconductors and, thus,reflects the details of the realistic band structure of semiconductors.We calculated the ionization probabilities for Si, GaAs,InAs,and In_0.53>Ga_0.47>As,and compared with those from the first-principles under the constant matrix element approximation.A reasonable agreement between the two approaches was obtained.We also found that the ionization probability has a similar magnitude and energy-dependence at high energy regions for all materials we have considered. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | impact ionization / ionization probability / carrier transport / hot-carrier effects |
Paper # | ED94-61,SDM94-98,VLD94-58 |
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Conference Information | |
Committee | ED |
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Conference Date | 1994/9/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Novel impact ionization model consistent with band structure of semiconductors |
Sub Title (in English) | |
Keyword(1) | impact ionization |
Keyword(2) | ionization probability |
Keyword(3) | carrier transport |
Keyword(4) | hot-carrier effects |
1st Author's Name | Nobuyuki Sano |
1st Author's Affiliation | NTT LSI Laboratories() |
2nd Author's Name | Akira Yoshii |
2nd Author's Affiliation | NTT LSI Laboratories |
Date | 1994/9/14 |
Paper # | ED94-61,SDM94-98,VLD94-58 |
Volume (vol) | vol.94 |
Number (no) | 231 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |