Presentation | 1994/9/14 Prediction of high-speed bipolar transistor properties by process and device Simulaton Kishiko Maruyama, Yoichi Tamaki, Hisako Sato, Hiroo Masuda, Hitoshi Matsuo, Sigeo Ihara, Toru Toyabe, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An efficient design methodology for high-speed bipolar transistors has been developed using process and device simulation, taking into account defect induced transient enhanced and a more accurate polysilicon emitter model.The enhancement factor of transient diffusion was extracted from measurements for preceise prediction of the impurity profile,and a new model for interfacial oxide was developed for the polysilicon emitter.As a result, prediction errors of current gain h_FE> and cut-off frequency f_T were reduced to less than 10%. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | process simulation / device simulation / bipolar transistor / transient enhanced diffusion / polysilicon emitter / interfacial oxide |
Paper # | ED94-57,SDM94-94,VLD94-54 |
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Conference Information | |
Committee | ED |
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Conference Date | 1994/9/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Prediction of high-speed bipolar transistor properties by process and device Simulaton |
Sub Title (in English) | |
Keyword(1) | process simulation |
Keyword(2) | device simulation |
Keyword(3) | bipolar transistor |
Keyword(4) | transient enhanced diffusion |
Keyword(5) | polysilicon emitter |
Keyword(6) | interfacial oxide |
1st Author's Name | Kishiko Maruyama |
1st Author's Affiliation | Central Research Laboratory,Hitachi,Ltd.() |
2nd Author's Name | Yoichi Tamaki |
2nd Author's Affiliation | Device Development Center,Hitachi,Ltd. |
3rd Author's Name | Hisako Sato |
3rd Author's Affiliation | Device Development Center,Hitachi,Ltd. |
4th Author's Name | Hiroo Masuda |
4th Author's Affiliation | Device Development Center,Hitachi,Ltd. |
5th Author's Name | Hitoshi Matsuo |
5th Author's Affiliation | Central Research Laboratory,Hitachi,Ltd. |
6th Author's Name | Sigeo Ihara |
6th Author's Affiliation | Central Research Laboratory,Hitachi,Ltd. |
7th Author's Name | Toru Toyabe |
7th Author's Affiliation | Department of Information and Computer Sciences,Faculty of Engineering,Toyo University |
Date | 1994/9/14 |
Paper # | ED94-57,SDM94-94,VLD94-54 |
Volume (vol) | vol.94 |
Number (no) | 231 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |