| Presentation | 1994/9/14 Device simulation of kink phenomend in InAlAs/InGaAs HEMTs Takatomo Enoki, Nobuyuki Sano, Masaaki Tomizawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper,we report effects of non-isothermal non- equdlibrium simulation which consistently takes account of both carrier and lattice temperatures on MOSFET characteristics.To obtain stable convergence and high rebability of simulation,some effective methods for solving the energy balance equation are proposed.These include an estimation of initial values,a correction of non-physical negative carrier densities and temperatures which occur during calculation,and an adaptive mesh method.These also result in a faster convergence of the simulation. MOSFET characteristics based on this model are compared with other conventional ones.It is found that non-isothermal non- equilibrium transport effect can not be neglected in small-size semiconductor devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs / Impact ionization / Kink / Surface depletion layer / Two dimensional device simulation |
| Paper # | ED94-56,SDM94-93,VLD94-53 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/9/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device simulation of kink phenomend in InAlAs/InGaAs HEMTs |
| Sub Title (in English) | |
| Keyword(1) | InGaAs |
| Keyword(2) | Impact ionization |
| Keyword(3) | Kink |
| Keyword(4) | Surface depletion layer |
| Keyword(5) | Two dimensional device simulation |
| 1st Author's Name | Takatomo Enoki |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Nobuyuki Sano |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | Masaaki Tomizawa |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| Date | 1994/9/14 |
| Paper # | ED94-56,SDM94-93,VLD94-53 |
| Volume (vol) | vol.94 |
| Number (no) | 231 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |