| Presentation | 1994/9/14 Non-isothermal non-equilibrium simulation of semiconductor devices Hirofumi Kawashima, Hirokazu Hayashi, Ryo Dang, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper,we report effects of non-isothermal non- equdlibrium simulation which consistently takes account of both carrier and lattice temperatures on MOSFET characteristics.To obtain stable convergence and high rebability of simulation,some effective methods for solving the energy balance equation are proposed.These include an estimation of initial values,a correction of non-physical negative carrier densities and temperatures which occur during calculation,and an adaptive mesh method.These also result in a faster convergence of the simulation. MOSFET characteristics based on this model are compared with other conventional ones.It is found that non-isothermal non- equilibrium transport effect can not be neglected in small-size semiconductor devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | device simulation / energy balance equation / thermal diffusion equation / adaptive mesh method / MOSFET |
| Paper # | ED94-55,SDM94-92,VLD94-52 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/9/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Non-isothermal non-equilibrium simulation of semiconductor devices |
| Sub Title (in English) | |
| Keyword(1) | device simulation |
| Keyword(2) | energy balance equation |
| Keyword(3) | thermal diffusion equation |
| Keyword(4) | adaptive mesh method |
| Keyword(5) | MOSFET |
| 1st Author's Name | Hirofumi Kawashima |
| 1st Author's Affiliation | Graduate School of Engineering,Hosei University() |
| 2nd Author's Name | Hirokazu Hayashi |
| 2nd Author's Affiliation | Oki Electric Industry Company |
| 3rd Author's Name | Ryo Dang |
| 3rd Author's Affiliation | College of Engineering,Hosei University |
| Date | 1994/9/14 |
| Paper # | ED94-55,SDM94-92,VLD94-52 |
| Volume (vol) | vol.94 |
| Number (no) | 231 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |