Presentation | 1994/7/25 Optical waveguide and quantum contined Stark effect optical switch on Si substrate Takashi Jinbo, Tsutomu Murase, Masayoshi Umeno, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The characteristics of AlGaAs optical waveguides on Si substrate were compared with that of on GaAs substrate.The propagation loss of the waveguide on Si is larger than the that of on GaAs because of the surface roughness and the cracks in the thick epitaxial layer formed by the mismatch of thermal expansion coefficients. An optical switch using quantum confined Stark effect is also fabricated on Si substrate.The Stark shift of the absorption edge is almost same as that of on GaAs substrate. These passive devices do not change thier characteristics during their long operation time and provide the reliable optical components for OEIC′s. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOCVD / GaAs/i / Optical Waveguide / Optical Switch / OEIC |
Paper # | ED94-39,OPE94-30,LQE94-26 |
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Conference Information | |
Committee | ED |
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Conference Date | 1994/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Optical waveguide and quantum contined Stark effect optical switch on Si substrate |
Sub Title (in English) | |
Keyword(1) | MOCVD |
Keyword(2) | GaAs/i |
Keyword(3) | Optical Waveguide |
Keyword(4) | Optical Switch |
Keyword(5) | OEIC |
1st Author's Name | Takashi Jinbo |
1st Author's Affiliation | Research Center for Micro-Structure Devices,Nagoya Institute of Technology() |
2nd Author's Name | Tsutomu Murase |
2nd Author's Affiliation | Toshiba |
3rd Author's Name | Masayoshi Umeno |
3rd Author's Affiliation | Department of Electrical and Computer Engineering,Research Center for Micro-Structure Devices,Nagoya Institute of Technology |
Date | 1994/7/25 |
Paper # | ED94-39,OPE94-30,LQE94-26 |
Volume (vol) | vol.94 |
Number (no) | 177 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |