Presentation 1994/7/25
Optical waveguide and quantum contined Stark effect optical switch on Si substrate
Takashi Jinbo, Tsutomu Murase, Masayoshi Umeno,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The characteristics of AlGaAs optical waveguides on Si substrate were compared with that of on GaAs substrate.The propagation loss of the waveguide on Si is larger than the that of on GaAs because of the surface roughness and the cracks in the thick epitaxial layer formed by the mismatch of thermal expansion coefficients. An optical switch using quantum confined Stark effect is also fabricated on Si substrate.The Stark shift of the absorption edge is almost same as that of on GaAs substrate. These passive devices do not change thier characteristics during their long operation time and provide the reliable optical components for OEIC′s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOCVD / GaAs/i / Optical Waveguide / Optical Switch / OEIC
Paper # ED94-39,OPE94-30,LQE94-26
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Committee ED
Conference Date 1994/7/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optical waveguide and quantum contined Stark effect optical switch on Si substrate
Sub Title (in English)
Keyword(1) MOCVD
Keyword(2) GaAs/i
Keyword(3) Optical Waveguide
Keyword(4) Optical Switch
Keyword(5) OEIC
1st Author's Name Takashi Jinbo
1st Author's Affiliation Research Center for Micro-Structure Devices,Nagoya Institute of Technology()
2nd Author's Name Tsutomu Murase
2nd Author's Affiliation Toshiba
3rd Author's Name Masayoshi Umeno
3rd Author's Affiliation Department of Electrical and Computer Engineering,Research Center for Micro-Structure Devices,Nagoya Institute of Technology
Date 1994/7/25
Paper # ED94-39,OPE94-30,LQE94-26
Volume (vol) vol.94
Number (no) 177
Page pp.pp.-
#Pages 6
Date of Issue