| Presentation | 1999/2/16 Electrical Properties of Ferroelectric Bi_4Ti_3O_<12> Film Grown on Si Substrate Takeshi KIJIMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Pt/Bi_2Si0_5/Si(MIS) and Pt/200-nm-Bi_4Ti_3O_<12>/Pt/30-nm-Bi_2SiO_5/Si(Metal/Ferroelectric/Metal/Insulator/Semiconductor) structures were prepared by MOCVD method. When the capacitance-vs-voitage(C-V) characteristics of the Pt/Bi_2SiO_5/Si structure was measured, the inversion layer formation could be confirmed by the electron of the minor career. On the other hand, the C-V characteristics of Pt/Bi_4Ti_3O_<12>/Pt/Bi_2SiO_5/Si structure has ferroelectric switching property, and the memory window was about 2.0V. Further more, it is shown that the capacitance at zero-bias shows almost constant for 24 h. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MFMIS-FET / ferroelectric memory / Bi_4Ti_3O_<12> / bismuth silicate / Bi_2SiO_5 / MOCVD method |
| Paper # | ED98-254 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/2/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Ferroelectric Bi_4Ti_3O_<12> Film Grown on Si Substrate |
| Sub Title (in English) | |
| Keyword(1) | MFMIS-FET |
| Keyword(2) | ferroelectric memory |
| Keyword(3) | Bi_4Ti_3O_<12> |
| Keyword(4) | bismuth silicate |
| Keyword(5) | Bi_2SiO_5 |
| Keyword(6) | MOCVD method |
| 1st Author's Name | Takeshi KIJIMA |
| 1st Author's Affiliation | Functional Devices Laboratories, SHARP Corporation() |
| Date | 1999/2/16 |
| Paper # | ED98-254 |
| Volume (vol) | vol.98 |
| Number (no) | 591 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |