| Presentation | 1999/2/15 Process Degradation of a Ferroelectric Capacitor T. Tamura, T. Takai, K. Matsuura, H. Ashida, K. Kondo, S. Otani, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferroelectrics used in a memory device such as (Pb,La)(Zr,Ti)O_3(PLZT)are vulnerble to reducing atmosphere and lose remanent polarization easily. In the semiconductor processes, hydrogen gas is generated both from deposition gas of interlayer dielectric and from reaction between metals and moisture in the dielectric Improvement of reduction endurance is required for the planarization and multi-layer interconnection for the future devices. Reduction of remanent polarization is related to the imprint property of the capacitor which can be improved by controlling the deposition condition of sol-gel PLZT and annealing IrO_x electrode in oxygen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / PLZT / interlayer dielectric / hydrogen degradation / imprint |
| Paper # | ED98-243 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/2/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Process Degradation of a Ferroelectric Capacitor |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | PLZT |
| Keyword(3) | interlayer dielectric |
| Keyword(4) | hydrogen degradation |
| Keyword(5) | imprint |
| 1st Author's Name | T. Tamura |
| 1st Author's Affiliation | Fujitsu Limited Technology Development Division() |
| 2nd Author's Name | T. Takai |
| 2nd Author's Affiliation | Fujitsu Limited Technology Development Division |
| 3rd Author's Name | K. Matsuura |
| 3rd Author's Affiliation | Fujitsu Limited Technology Development Division |
| 4th Author's Name | H. Ashida |
| 4th Author's Affiliation | Fujitsu Limited Technology Development Division |
| 5th Author's Name | K. Kondo |
| 5th Author's Affiliation | Fujitsu Limited Technology Development Division |
| 6th Author's Name | S. Otani |
| 6th Author's Affiliation | Fujitsu Limited Technology Development Division |
| Date | 1999/2/15 |
| Paper # | ED98-243 |
| Volume (vol) | vol.98 |
| Number (no) | 590 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |