Presentation 1999/2/15
Current Status of LSMCD SBT Thin Films
Shinichiro Hayashi, Yasuhiro Shimada, Eiji Fujii, Tatsuo Otsuki,
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Abstract(in English) Bismuth layer-structured perovskite such as strontium bismuth tantalate (SBT) have attracted more attention as storage capacitor ferroelectrics to commercialize an FeRAM embedded IC cards and microcontrollers with low voltage operation and non-volatile properties. We demonstrate a 0.7V FeRAM with 70nm thick SBTN film capacitors using liquid source misted chemical deposition (LSMCD).
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Keyword(in English) FeRAM / bismuth layer-structured perovskite / low voltage operation / non-volatile / LSMCD
Paper # ED98-241
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Committee ED
Conference Date 1999/2/15(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Current Status of LSMCD SBT Thin Films
Sub Title (in English)
Keyword(1) FeRAM
Keyword(2) bismuth layer-structured perovskite
Keyword(3) low voltage operation
Keyword(4) non-volatile
Keyword(5) LSMCD
1st Author's Name Shinichiro Hayashi
1st Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation()
2nd Author's Name Yasuhiro Shimada
2nd Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
3rd Author's Name Eiji Fujii
3rd Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
4th Author's Name Tatsuo Otsuki
4th Author's Affiliation Electronics Research Laboratory, Matsushita Electronics Corporation
Date 1999/2/15
Paper # ED98-241
Volume (vol) vol.98
Number (no) 590
Page pp.pp.-
#Pages 5
Date of Issue