Presentation | 1999/2/15 Current Status of LSMCD SBT Thin Films Shinichiro Hayashi, Yasuhiro Shimada, Eiji Fujii, Tatsuo Otsuki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Bismuth layer-structured perovskite such as strontium bismuth tantalate (SBT) have attracted more attention as storage capacitor ferroelectrics to commercialize an FeRAM embedded IC cards and microcontrollers with low voltage operation and non-volatile properties. We demonstrate a 0.7V FeRAM with 70nm thick SBTN film capacitors using liquid source misted chemical deposition (LSMCD). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | FeRAM / bismuth layer-structured perovskite / low voltage operation / non-volatile / LSMCD |
Paper # | ED98-241 |
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Conference Information | |
Committee | ED |
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Conference Date | 1999/2/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Current Status of LSMCD SBT Thin Films |
Sub Title (in English) | |
Keyword(1) | FeRAM |
Keyword(2) | bismuth layer-structured perovskite |
Keyword(3) | low voltage operation |
Keyword(4) | non-volatile |
Keyword(5) | LSMCD |
1st Author's Name | Shinichiro Hayashi |
1st Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation() |
2nd Author's Name | Yasuhiro Shimada |
2nd Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
3rd Author's Name | Eiji Fujii |
3rd Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
4th Author's Name | Tatsuo Otsuki |
4th Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
Date | 1999/2/15 |
Paper # | ED98-241 |
Volume (vol) | vol.98 |
Number (no) | 590 |
Page | pp.pp.- |
#Pages | 5 |
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