Presentation 1998/11/6
Quantum Chemical Calculations of Gas Phase Reaction of Al(CH_3)_3 and NH_3 in Atmospheric Pressure MOVPE
Koh Matsumoto, Nakao Akutsu, Hiroki Tokunaga, Akitomo Tachibana,
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Abstract(in English) Gas phase reaction between TMA and NH_3 blocks the incorporation of Ga into the film as well as Al in atmospheric pressure MOVPE. In order to elucidate this mechanism, we have investigated the reaction between TMA and NH_3 in terms of the quantum chemical calculations. According to the calculations, the barrier of methyl elimination in the TAM-NH_3 system is low as compared with other systems, and therefore it is easy to form the intermediate leading to the propagation of polymer in the TMA-NH_3-TMG system. In this report, we introduce the proposed reaction process based on the experimental results for model of the TMA-NH_3 system.
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Keyword(in English) APMOVPE / III-Nitride semiconductors / parasitic reaction / AlGaN / TMA / quantum chemical calculations
Paper # ED98-140,CPM98-143
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Committee ED
Conference Date 1998/11/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Quantum Chemical Calculations of Gas Phase Reaction of Al(CH_3)_3 and NH_3 in Atmospheric Pressure MOVPE
Sub Title (in English)
Keyword(1) APMOVPE
Keyword(2) III-Nitride semiconductors
Keyword(3) parasitic reaction
Keyword(4) AlGaN
Keyword(5) TMA
Keyword(6) quantum chemical calculations
1st Author's Name Koh Matsumoto
1st Author's Affiliation NIPPON SANSO Corp.Tsukuba Lab.()
2nd Author's Name Nakao Akutsu
2nd Author's Affiliation NIPPON SANSO Corp.Tsukuba Lab.
3rd Author's Name Hiroki Tokunaga
3rd Author's Affiliation NIPPON SANSO Corp.Tsukuba Lab.
4th Author's Name Akitomo Tachibana
4th Author's Affiliation Dept.Eng.Physics and Mechanics, Kyoto University
Date 1998/11/6
Paper # ED98-140,CPM98-143
Volume (vol) vol.98
Number (no) 384
Page pp.pp.-
#Pages 7
Date of Issue