Presentation | 1998/11/6 Phosphorus composition increase in GaN-rich GaNP by gas source MBE H. Tampo, H. Asahi, K. Iwata, M. Hiroki, K. Asami, S. Gonda, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaN-rich GaNP was grown on sapphire(0001)plane by gas source MBE. P composition in GaNP increased with decreasing the substrate temperatures, although PH_3 flux did not influence with P composition so much. The maximum P composition obtained was 0.08 and its bandgap energy was 2.76 eV. It corresponds to blue-violet wavelength region. P composition dependence of bandgap energy grown at low substrate temperatures agreed with the dependence grown at 750℃. The bandgap energy bowing parameter was 9.31eV. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN-rich GaNP / bandgap bowing / growth temperature dependence / low temperature growth |
Paper # | ED98-136,CPM98-139 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 1998/11/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Phosphorus composition increase in GaN-rich GaNP by gas source MBE |
Sub Title (in English) | |
Keyword(1) | GaN-rich GaNP |
Keyword(2) | bandgap bowing |
Keyword(3) | growth temperature dependence |
Keyword(4) | low temperature growth |
1st Author's Name | H. Tampo |
1st Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University() |
2nd Author's Name | H. Asahi |
2nd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
3rd Author's Name | K. Iwata |
3rd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
4th Author's Name | M. Hiroki |
4th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
5th Author's Name | K. Asami |
5th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
6th Author's Name | S. Gonda |
6th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
Date | 1998/11/6 |
Paper # | ED98-136,CPM98-139 |
Volume (vol) | vol.98 |
Number (no) | 384 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |