| Presentation | 1998/7/22 Two-Step GaAs/AlGaAs Selective Dry Etching Using SiCl_4/SF_6/N_2 Gas Tomoya Uda, Mitsuru Nishitsuji, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a new two-step GaAs/AlGaAs selective dry etching by using SiCl_4/SF_6/N_2 gas in Inductively Coupled Plasma system. In this process, we can control the vertical and lateral etching of the gate recess independently by turning on and off the N_2 flow. The length of side-etching is controlled only by the second etching step. GaAs/AlGaAs/InGaAs p-HFETs were fabricated using this process. The resultant gate-drain breakdown voltage can be varied from 9 to 20 V by controlling the length of side-etching of n^+-GaAs layer keeping the same threshold voltage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | selective dry etching / SiCl_4/SF_6/N_2gas / ICP / gate recess / side-etching |
| Paper # | ED98-97 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Two-Step GaAs/AlGaAs Selective Dry Etching Using SiCl_4/SF_6/N_2 Gas |
| Sub Title (in English) | |
| Keyword(1) | selective dry etching |
| Keyword(2) | SiCl_4/SF_6/N_2gas |
| Keyword(3) | ICP |
| Keyword(4) | gate recess |
| Keyword(5) | side-etching |
| 1st Author's Name | Tomoya Uda |
| 1st Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation() |
| 2nd Author's Name | Mitsuru Nishitsuji |
| 2nd Author's Affiliation | Electronics Research Laboratories, Matsushita Electronics Corporation |
| 3rd Author's Name | Kaoru Inoue |
| 3rd Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| 4th Author's Name | Tsuyoshi Tanaka |
| 4th Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| 5th Author's Name | Daisuke Ueda |
| 5th Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| Date | 1998/7/22 |
| Paper # | ED98-97 |
| Volume (vol) | vol.98 |
| Number (no) | 185 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |