| Presentation | 1998/7/21 In-Situ UHV Study on Formation Process of ultrathin Si layer on GaAs(001)for surface Passivation N. Tsurumi, M. Mutoh, T. Hasizume, H. Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to understand and to optimize the formation process of ultrathin Si layer on GaAs, various surface treatment processes such as excess-As treatment, H_2 gas treatment and H_2 plasma treatment, were investigated. Microscopic surface structures of the treated surfaces were observed by UHV STM and electronic properties of the surfaces were evaluated by XPS, UHV contactless C-V and PL measurements. Excess-As treatment was found to form rather smooth surface and to be effective in surface passivation of GaAs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ultrathin Si layer / GaAs / surface treatment / UHV-STM / XPS / PL / UHV-contactless C-V / density of surface state |
| Paper # | ED98-83 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | In-Situ UHV Study on Formation Process of ultrathin Si layer on GaAs(001)for surface Passivation |
| Sub Title (in English) | |
| Keyword(1) | ultrathin Si layer |
| Keyword(2) | GaAs |
| Keyword(3) | surface treatment |
| Keyword(4) | UHV-STM |
| Keyword(5) | XPS |
| Keyword(6) | PL |
| Keyword(7) | UHV-contactless C-V |
| Keyword(8) | density of surface state |
| 1st Author's Name | N. Tsurumi |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University() |
| 2nd Author's Name | M. Mutoh |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| 3rd Author's Name | T. Hasizume |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| 4th Author's Name | H. Hasegawa |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| Date | 1998/7/21 |
| Paper # | ED98-83 |
| Volume (vol) | vol.98 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |