Presentation | 1998/7/21 Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method Akira Izumi, Atsushi Masuda, Hideki Matsumura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We proposed a novel method of low temperature surface cleaning technology of GaAs and formation of high quality silicon nitride(SiN_x) films by catalytic chemical vapor deposition(Cat-CVD) method. An NH_3 gas was used for the surface cleaning of(100)GaAs without any chemical treatment at the substrate temperature as low as 150℃. XPS measurements revealed obvious reduction of intensities of oxygen related peaks of GaAs and appearance of nitrogen related peaks from long time treated samples. Using a SiH_4 and NH_3 gas mixture, stoichiometric, conformal step coverage and low hydrogen content SiN_x films were obtained below 300℃ by this method. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | catalytic-CVD / hot wire CVD / surface cleaning / surface nitridation / GaAs / SiN_x |
Paper # | ED98-82 |
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Committee | ED |
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Conference Date | 1998/7/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method |
Sub Title (in English) | |
Keyword(1) | catalytic-CVD |
Keyword(2) | hot wire CVD |
Keyword(3) | surface cleaning |
Keyword(4) | surface nitridation |
Keyword(5) | GaAs |
Keyword(6) | SiN_x |
1st Author's Name | Akira Izumi |
1st Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology)() |
2nd Author's Name | Atsushi Masuda |
2nd Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology) |
3rd Author's Name | Hideki Matsumura |
3rd Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology) |
Date | 1998/7/21 |
Paper # | ED98-82 |
Volume (vol) | vol.98 |
Number (no) | 184 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |