Presentation 1998/7/21
Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method
Akira Izumi, Atsushi Masuda, Hideki Matsumura,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We proposed a novel method of low temperature surface cleaning technology of GaAs and formation of high quality silicon nitride(SiN_x) films by catalytic chemical vapor deposition(Cat-CVD) method. An NH_3 gas was used for the surface cleaning of(100)GaAs without any chemical treatment at the substrate temperature as low as 150℃. XPS measurements revealed obvious reduction of intensities of oxygen related peaks of GaAs and appearance of nitrogen related peaks from long time treated samples. Using a SiH_4 and NH_3 gas mixture, stoichiometric, conformal step coverage and low hydrogen content SiN_x films were obtained below 300℃ by this method.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) catalytic-CVD / hot wire CVD / surface cleaning / surface nitridation / GaAs / SiN_x
Paper # ED98-82
Date of Issue

Conference Information
Committee ED
Conference Date 1998/7/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Surface cleaning of garium arsenide and formation of silicon nitride using by catalytic-CVD method
Sub Title (in English)
Keyword(1) catalytic-CVD
Keyword(2) hot wire CVD
Keyword(3) surface cleaning
Keyword(4) surface nitridation
Keyword(5) GaAs
Keyword(6) SiN_x
1st Author's Name Akira Izumi
1st Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)()
2nd Author's Name Atsushi Masuda
2nd Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)
3rd Author's Name Hideki Matsumura
3rd Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)
Date 1998/7/21
Paper # ED98-82
Volume (vol) vol.98
Number (no) 184
Page pp.pp.-
#Pages 6
Date of Issue