| Presentation | 1998/7/21 Formation of insulating film on GaAs using magnetically excited plasma Satoshi Wada, Keisuke Kanazawa, Nariaki Okamoto, Hideaki Ikoma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaAs was nitrided using short-haul helicon-wave excited N_2+Ar plasma for the purpose of growing thin interfacial layer. X-ray photoelectron spectroscopic measurements were performed. Thermal stability, elapsed time stability were also investigated. Barrier height of Schottky junction on non-treated GaAs is obviously decreased after post thermal annealing at 250℃, while barrier height of Schottky diode on the GaAs substrate treated by helicon-wave excited plasma didn't decrease after post annealing at about 500℃. After three months exposure to air, I-V characteristics were almost unchanged. Therefore N_2+Ar plasma treatment is probably effective for surface passivation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / helicon-wave excited plasma / nitridation / X-ray photoelectron spectroscopy / barrier height / surface passivation |
| Paper # | ED98-81 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of insulating film on GaAs using magnetically excited plasma |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | helicon-wave excited plasma |
| Keyword(3) | nitridation |
| Keyword(4) | X-ray photoelectron spectroscopy |
| Keyword(5) | barrier height |
| Keyword(6) | surface passivation |
| 1st Author's Name | Satoshi Wada |
| 1st Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo() |
| 2nd Author's Name | Keisuke Kanazawa |
| 2nd Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo |
| 3rd Author's Name | Nariaki Okamoto |
| 3rd Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo |
| 4th Author's Name | Hideaki Ikoma |
| 4th Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo |
| Date | 1998/7/21 |
| Paper # | ED98-81 |
| Volume (vol) | vol.98 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |