Presentation 1998/7/21
GaAs surface passivation with GaS thin film and its application
Naoya Okamoto, Naoki Hara, Tsuyoshi Takahashi, Hitoshi Tanaka, Masahiko Takikawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report on GaAs surface passivation with GaS film grown by molecular beam epitaxy using tertiarybutyl-galliumsulfide-cubane[(t-Bu)GaS]_4. By passivating with GaS, GaAs photoluminescence intensity increasedand has remainedsteady for 2 years. GaS is along-term stable passivation material. The interface state density dependson the GaAs surfacereconstruction before GaS passiviation and it shows the lowest value of 5x10^<10> eV^<-1>cm^<-2> for As terminated c(4x4) reconstruction among the investigated reconstructions. Furthemore, we applied GaS passivation to depletion-mode GaS/GaAs MISFET and nonalloyed ohmic contact to n-GaAs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) surface passivation / GaS / interface state density / surface reconstruction / MISFET / nonalloyed ohmic
Paper # ED98-80
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Committee ED
Conference Date 1998/7/21(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaAs surface passivation with GaS thin film and its application
Sub Title (in English)
Keyword(1) surface passivation
Keyword(2) GaS
Keyword(3) interface state density
Keyword(4) surface reconstruction
Keyword(5) MISFET
Keyword(6) nonalloyed ohmic
1st Author's Name Naoya Okamoto
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Naoki Hara
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Tsuyoshi Takahashi
3rd Author's Affiliation Fujitsu Laboratories Ltd.
4th Author's Name Hitoshi Tanaka
4th Author's Affiliation Fujitsu Laboratories Ltd.
5th Author's Name Masahiko Takikawa
5th Author's Affiliation Fujitsu Laboratories Ltd.
Date 1998/7/21
Paper # ED98-80
Volume (vol) vol.98
Number (no) 184
Page pp.pp.-
#Pages 7
Date of Issue