| Presentation | 1998/7/21 Fabrication of the Metal dot array by Electrochemical Process Taketomo SATO, Chinami KANESHIRO, Hiroshi OKADA, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Pt dot arrays were formed on n-GaAs by combining the electrochemical process with the electron-beam(EB) lithoghography. In order to define dot positions, dot-array windows were patterned on GaAs by EB lithography. It is possible to form the metal particles on only the opened areas of EB patterned substrates, thereby realizing precise dot-positions control. In this study, Pt particles with a diameter of 20nm could be formed in the center of each naked GaAs surface patterned with a period of 200nm. In the measurements by the AFM system with conductive probes, I-V characteristics of each Pt dots/n-GaAs contact showed rectifying behavior due to Schottky barrier formation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electrochemical process / metal dot / Pt / GaAs / SEM / AFM / I-V |
| Paper # | ED98-79 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of the Metal dot array by Electrochemical Process |
| Sub Title (in English) | |
| Keyword(1) | electrochemical process |
| Keyword(2) | metal dot |
| Keyword(3) | Pt |
| Keyword(4) | GaAs |
| Keyword(5) | SEM |
| Keyword(6) | AFM |
| Keyword(7) | I-V |
| 1st Author's Name | Taketomo SATO |
| 1st Author's Affiliation | Graduate School of Electronics and Information Engineering and Research Center for Interface Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Chinami KANESHIRO |
| 2nd Author's Affiliation | Graduate School of Electronics and Information Engineering and Research Center for Interface Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Hiroshi OKADA |
| 3rd Author's Affiliation | Graduate School of Electronics and Information Engineering and Research Center for Interface Quantum Electronics, Hokkaido University |
| 4th Author's Name | Hideki HASEGAWA |
| 4th Author's Affiliation | Graduate School of Electronics and Information Engineering and Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 1998/7/21 |
| Paper # | ED98-79 |
| Volume (vol) | vol.98 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |