| Presentation | 1998/7/21 Fabrication and Characterization of Compound Semiconductor Single Electron Devices Having Novel Gate Structures Hiroshi Okada, Yoshihiro Sato, Hajime Fujikura, Tamotsu Hashizume, Hideki Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Compound semiconductor based single electron devices having novel gate structures have been proposed and investigated. Schottky wrap gate(WPG) configruation was applied to AlGaAs/GaAs quasi one-dimensional wire to form potential barrier and to control potential of quantum dot within the wire. Single electron transistor(SET) operation as well as the maximum voltage gain larger than unity was achieved in the WPG SET. Furthermore, Schottky WPG controlled SET was succesfully fabricated directly onto an InAlAs/InGaAs/InAlAs ridge quantum wire grown by selective MBE. Fabricated InGaAs WPG SET showed clear Coulomb blockade conductance oscillations up to 30K with Coulomb gap of 10mV. These results indicate the proposed WPG structure is useful to realize compound semiconductor SETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single-electron transistor / Schottky contact / wrap gate / Coulomb blockade / Coulomb staircase / voltage gain |
| Paper # | ED98-78 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of Compound Semiconductor Single Electron Devices Having Novel Gate Structures |
| Sub Title (in English) | |
| Keyword(1) | single-electron transistor |
| Keyword(2) | Schottky contact |
| Keyword(3) | wrap gate |
| Keyword(4) | Coulomb blockade |
| Keyword(5) | Coulomb staircase |
| Keyword(6) | voltage gain |
| 1st Author's Name | Hiroshi Okada |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University() |
| 2nd Author's Name | Yoshihiro Sato |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| 3rd Author's Name | Hajime Fujikura |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| 4th Author's Name | Tamotsu Hashizume |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| 5th Author's Name | Hideki Hasegawa |
| 5th Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University |
| Date | 1998/7/21 |
| Paper # | ED98-78 |
| Volume (vol) | vol.98 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |