Presentation 1998/7/21
SEM/AFM Based Nanofabrication of Carbonaceous Masks for Selective Growth on Semiconductor Surfaces
Adrian Avramescu, Akio Ueta, Katsuhiro Uesugi, Ikuo Suemune,
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Abstract(in English) A nanometer-scale mask that can be used for selective growth or selective etching was obtained by two-stage patterning. In the first step, a microscopic patterning was performed using a scanning electron microscope(SEM). In the second stage patterning of the carbonaceous film was made using an atomic force microscope(AFM). Further etching resulted in the pattern formation on the semiconductor surface with a minimum linewidth of ~22nm. Selective growth of ZnSe and ZnS as low as 300~400℃ is possible with thus prepared carbonaceous masks.
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Keyword(in English) AFM / SEM / nanolithography / selective growth / carbonaceous film / ZnSe
Paper # ED98-77
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Committee ED
Conference Date 1998/7/21(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SEM/AFM Based Nanofabrication of Carbonaceous Masks for Selective Growth on Semiconductor Surfaces
Sub Title (in English)
Keyword(1) AFM
Keyword(2) SEM
Keyword(3) nanolithography
Keyword(4) selective growth
Keyword(5) carbonaceous film
Keyword(6) ZnSe
1st Author's Name Adrian Avramescu
1st Author's Affiliation Research Institute for Electronic Science, Hokkaido University()
2nd Author's Name Akio Ueta
2nd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
3rd Author's Name Katsuhiro Uesugi
3rd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
4th Author's Name Ikuo Suemune
4th Author's Affiliation Research Institute for Electronic Science, Hokkaido University
Date 1998/7/21
Paper # ED98-77
Volume (vol) vol.98
Number (no) 184
Page pp.pp.-
#Pages 6
Date of Issue