| Presentation | 1998/7/21 Room Temperature Single Electron Transistor formed by AFM Nano-Oxidation Process Kazuhiko Matsumoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Room temperature characteristics of the single electron transistor fabricated using the AFM nano-oxidation process are described. New and improved AFM non-oxidation process are also included which enhances the aspect ration of the oxidized titanium line. A clear Coulomb oscilation with teh period of 1.8V and a Coulomb diamond are observed at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AFM / STM / single electron transistor / Coulomb oscillation / Coulomb diamond |
| Paper # | ED98-76 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room Temperature Single Electron Transistor formed by AFM Nano-Oxidation Process |
| Sub Title (in English) | |
| Keyword(1) | AFM |
| Keyword(2) | STM |
| Keyword(3) | single electron transistor |
| Keyword(4) | Coulomb oscillation |
| Keyword(5) | Coulomb diamond |
| 1st Author's Name | Kazuhiko Matsumoto |
| 1st Author's Affiliation | Electrotechnical Laboratory() |
| Date | 1998/7/21 |
| Paper # | ED98-76 |
| Volume (vol) | vol.98 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |