| Presentation | 1998/12/11 Improvement of emission current stability and lowering of emission threshold voltage using tetrahedral amorphous carbon of MIS tunneling emmitter with epitaxial CaF_2 insulator layer K Oshima, Y. Miyamoto, W. Saito, T. Maruyama, M. Watanabe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated. To get high transfer efficiency at low applied voltage by using scheme of hot electron transistors, we studied n-Si/CaF_2/PtSi/Pt/ta-C MIS tunneling emitter with epitaxial CaF_2 insulator layer and the termination of surface by ta-C for low work function material. At first, n-Si/CaF_2/PtSi/Pt MIS tunneling emitter was fabricated. By the improvement of adhesion between CaF_2 and metal layer, formation of filaments was inhibited stable emission current before and after the exposure in the air was observed. Electron emission at lower applied voltage was observed at first measurement just after formation of ta-C film on the devices, although current-voltage characteristics was similar to these without ta-C at next measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PtSi/Pt / emission current / filaments / tetrahedral amorphous carbon(ta-C) |
| Paper # | ED98-168 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/12/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of emission current stability and lowering of emission threshold voltage using tetrahedral amorphous carbon of MIS tunneling emmitter with epitaxial CaF_2 insulator layer |
| Sub Title (in English) | |
| Keyword(1) | PtSi/Pt |
| Keyword(2) | emission current |
| Keyword(3) | filaments |
| Keyword(4) | tetrahedral amorphous carbon(ta-C) |
| 1st Author's Name | K Oshima |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Y. Miyamoto |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | W. Saito |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 4th Author's Name | T. Maruyama |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | M. Watanabe |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 1998/12/11 |
| Paper # | ED98-168 |
| Volume (vol) | vol.98 |
| Number (no) | 467 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |