Presentation 1998/5/22
Relation between OSF induced by B Ion lmplantation and Gate Oxide Reliability
Kenji Nakashima, Yukihiko Watanabe, Hirofumi Funabashi, Tomoyuki Yoshida, Yasuichi Mitsushima,
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Abstract(in English) Effects of ion implantation, interstitial oxygen concentration, and heat treatment after ion implantation on the formation of OSFs induced by B ion implantation were investigated. The OSFs were formed during oxidation when interstitial oxygen coexisted with B ion implantation defects, and the density of the OSFs increased with oxygen concentration. From these results, it is found that B ion implantation defects form oxygen precipitates which acts as nuclei for OSFs. In addition, the relation between the OSFs induced by B ion implantation and gate oxide reliability was investigated. The degradation of the oxide reliability was found to corelate with the OSFs formation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) boron / ion implantation / OSF / interstitial oxygen concentration / oxide / reliability
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Committee ED
Conference Date 1998/5/22(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Relation between OSF induced by B Ion lmplantation and Gate Oxide Reliability
Sub Title (in English)
Keyword(1) boron
Keyword(2) ion implantation
Keyword(3) OSF
Keyword(4) interstitial oxygen concentration
Keyword(5) oxide
Keyword(6) reliability
1st Author's Name Kenji Nakashima
1st Author's Affiliation TOYOTA Central R&D Labs., Inc.()
2nd Author's Name Yukihiko Watanabe
2nd Author's Affiliation TOYOTA Central R&D Labs., Inc.
3rd Author's Name Hirofumi Funabashi
3rd Author's Affiliation TOYOTA Central R&D Labs., Inc.
4th Author's Name Tomoyuki Yoshida
4th Author's Affiliation TOYOTA Central R&D Labs., Inc.
5th Author's Name Yasuichi Mitsushima
5th Author's Affiliation TOYOTA Central R&D Labs., Inc.
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 6
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