Presentation 1998/5/22
A prediction of gate oxid lifetime from the breakdown voltage measured by the voltage ramp method
Y Watanabe, N Soejima, T Yoshida, Y Mitsushima,
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Abstract(in English) We investigated a method of predicting the TDDB characteristics of gate oxide from the breakdown voltage distribution measured by the voltage ramp method. The TDDB characteristics were measured and predicted from the distribution function of the oxide effective thinning density that was calculated from the breakdown voltage distribution. The predicted TDDB characteristics were in good agreement with the measured characteristics in both intrinsic and extrinsic region.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) oxide / reliability / breakdown voltage / lifetime / prediction
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Committee ED
Conference Date 1998/5/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A prediction of gate oxid lifetime from the breakdown voltage measured by the voltage ramp method
Sub Title (in English)
Keyword(1) oxide
Keyword(2) reliability
Keyword(3) breakdown voltage
Keyword(4) lifetime
Keyword(5) prediction
1st Author's Name Y Watanabe
1st Author's Affiliation TOYOTA Central R&D Labs., Inc.()
2nd Author's Name N Soejima
2nd Author's Affiliation TOYOTA Central R&D Labs., Inc.
3rd Author's Name T Yoshida
3rd Author's Affiliation TOYOTA Central R&D Labs., Inc.
4th Author's Name Y Mitsushima
4th Author's Affiliation TOYOTA Central R&D Labs., Inc.
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 6
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