Presentation | 1998/5/22 A prediction of gate oxid lifetime from the breakdown voltage measured by the voltage ramp method Y Watanabe, N Soejima, T Yoshida, Y Mitsushima, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigated a method of predicting the TDDB characteristics of gate oxide from the breakdown voltage distribution measured by the voltage ramp method. The TDDB characteristics were measured and predicted from the distribution function of the oxide effective thinning density that was calculated from the breakdown voltage distribution. The predicted TDDB characteristics were in good agreement with the measured characteristics in both intrinsic and extrinsic region. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | oxide / reliability / breakdown voltage / lifetime / prediction |
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Conference Information | |
Committee | ED |
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Conference Date | 1998/5/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A prediction of gate oxid lifetime from the breakdown voltage measured by the voltage ramp method |
Sub Title (in English) | |
Keyword(1) | oxide |
Keyword(2) | reliability |
Keyword(3) | breakdown voltage |
Keyword(4) | lifetime |
Keyword(5) | prediction |
1st Author's Name | Y Watanabe |
1st Author's Affiliation | TOYOTA Central R&D Labs., Inc.() |
2nd Author's Name | N Soejima |
2nd Author's Affiliation | TOYOTA Central R&D Labs., Inc. |
3rd Author's Name | T Yoshida |
3rd Author's Affiliation | TOYOTA Central R&D Labs., Inc. |
4th Author's Name | Y Mitsushima |
4th Author's Affiliation | TOYOTA Central R&D Labs., Inc. |
Date | 1998/5/22 |
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Volume (vol) | vol.98 |
Number (no) | 60 |
Page | pp.pp.- |
#Pages | 6 |
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