Presentation 1998/5/22
Angle resoleved x-ray photoelectron study on oxynitridation process
Masayuki Suzuki, Sumiyasu Iguchi, Yoji Saito,
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Abstract(in English) Althought silicon oxynitride films have drawn attention as high-quality gate dielectrics, their growth process is not clear. In this work, we tried direct oxynitridation of silicon by excited nitrogen and oxygen gaseous mixtures, and investigated the growth by angle resoleved x-ray photoelectron spectroscopy(ARXPS). With increase of the oxynitridation time, both nitrogen and oxygen concentration show the saturation behavior. At 700℃, N-Si_3 bonding structures become to dominate the surface structure. But at 800℃, N-Si_2 and N-Si bonding structures which are not stable become to increse. And ARXPS shows that silicon oxynitride films are made at about surface.
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Keyword(in English) oxynitride film / excited nitrogen / excited oxygen / angle resoleved x-ray photoelectron spectroscopy
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Conference Date 1998/5/22(1days)
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Language JPN
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Title (in English) Angle resoleved x-ray photoelectron study on oxynitridation process
Sub Title (in English)
Keyword(1) oxynitride film
Keyword(2) excited nitrogen
Keyword(3) excited oxygen
Keyword(4) angle resoleved x-ray photoelectron spectroscopy
1st Author's Name Masayuki Suzuki
1st Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University()
2nd Author's Name Sumiyasu Iguchi
2nd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
3rd Author's Name Yoji Saito
3rd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 8
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