Presentation | 1998/5/22 Angle resoleved x-ray photoelectron study on oxynitridation process Masayuki Suzuki, Sumiyasu Iguchi, Yoji Saito, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Althought silicon oxynitride films have drawn attention as high-quality gate dielectrics, their growth process is not clear. In this work, we tried direct oxynitridation of silicon by excited nitrogen and oxygen gaseous mixtures, and investigated the growth by angle resoleved x-ray photoelectron spectroscopy(ARXPS). With increase of the oxynitridation time, both nitrogen and oxygen concentration show the saturation behavior. At 700℃, N-Si_3 bonding structures become to dominate the surface structure. But at 800℃, N-Si_2 and N-Si bonding structures which are not stable become to increse. And ARXPS shows that silicon oxynitride films are made at about surface. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | oxynitride film / excited nitrogen / excited oxygen / angle resoleved x-ray photoelectron spectroscopy |
Paper # | |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 1998/5/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Angle resoleved x-ray photoelectron study on oxynitridation process |
Sub Title (in English) | |
Keyword(1) | oxynitride film |
Keyword(2) | excited nitrogen |
Keyword(3) | excited oxygen |
Keyword(4) | angle resoleved x-ray photoelectron spectroscopy |
1st Author's Name | Masayuki Suzuki |
1st Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University() |
2nd Author's Name | Sumiyasu Iguchi |
2nd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University |
3rd Author's Name | Yoji Saito |
3rd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University |
Date | 1998/5/22 |
Paper # | |
Volume (vol) | vol.98 |
Number (no) | 60 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |